Display device, manufacturing method thereof and method of mending breakage of line in display device

Abstract

The present invention is directed to a display device including a scanning line ( 1 ) formed on an insulating substrate; a storage capacitance line ( 3 ) formed in parallel to said scanning line; an image signal line ( 2 ) formed across said scanning line ( 1 ) and said storage capacitance line ( 3 ) through an insulating layer; and a pixel electrode ( 6 ) being surrounded with said scanning line ( 1 ), said storage capacitance line ( 3 ) and said image signal line ( 2 ); wherein at least one overlapped area ( 11 ) of said storage capacitance line ( 3 ) and said image signal line ( 2 ) is defined in the area other than the crossing region of the storage capacitance line ( 3 ) and the image signal line ( 2 ) within one pixel area; whereby, breakage of the image signal line is mended without increasing the production step, and production yield is improved.

What is claimed is:  
     
         1 . A display device comprising: 
 a scanning line formed on an insulating substrate;    a storage capacitance line formed in parallel to said scanning line;    an image signal line formed across said scanning line and said storage capacitance line through an insulating layer; and    a pixel electrode being surrounded with said scanning line, said storage capacitance line and said image signal line;    wherein at least one overlapped area of said storage capacitance line and said image signal line is formed in an area other than the crossing region of the storage capacitance line and the image signal line within one pixel area.    
     
     
         2 . The display device of  claim 1 , wherein said overlapped area of said storage capacitance line and said image signal line is formed by said image signal line and an extended area of said storage capacitance line which extends along one peripheral edge of said pixel electrode.  
     
     
         3 . The display device of any one of  claim 1  or  2 , wherein at least two of said overlapped area of said storage capacitance line and said image signal line are formed within one pixel area.  
     
     
         4 . The display device of  claim 1  or  2 , wherein said overlapped area of said storage capacitance line and said image signal line has an area of at least 4 μm×10 μm.  
     
     
         5 . Method for manufacturing a display device, wherein said display device comprises: 
 a scanning line formed on an insulating substrate;    a storage capacitance line formed in parallel to said scanning line;    an image signal line formed across said scanning line and said storage capacitance line through an insulating layer; and    a pixel electrode being surrounded with said scanning line, said storage capacitance line and said image signal line;    said method comprising a step of forming at least one overlapped area of said storage capacitance line and said image signal line in the area other than the crossing region of said storage capacitance line and said image signal line within one pixel area.    
     
     
         6 . The method of  claim 5 , wherein said step of forming said overlapped area of said storage capacitance line and said image signal line is formed further includes a step of forming said overlapped area by said image signal line and an extended area of said storage capacitance line which extends along one peripheral edge of the pixel electrode.  
     
     
         7 . The method of  claim 5 , wherein said step of forming said overlapped area of said storage capacitance line and said image signal line further includes a step of forming at least two overlapped area of the image signal line and said storage capacitance line or extended area of storage capacitance line within one pixel area.  
     
     
         8 . The method of  claim 5  or  6 , wherein in said step of forming said overlapped area of said storage capacitance line and said image signal line, said overlapped area of the image signal line and said storage capacitance line or extended area of storage capacitance line has the area more than 4 micron by 10 micron square.  
     
     
         9 . Method of mending the broken line in a display device according to the present invention is a method of mending the broken line in a display having a scanning line formed on an insulating substrate, a storage capacitance line formed in parallel to said scanning line, an image signal line being formed across said scanning line and said storage capacitance line through an insulating layer, and a pixel electrode being surrounded with said scanning line, said storage capacitance line and said image signal line, wherein said method includes steps of: 
 forming at least one overlapped area of said image signal line and the extended area of said storage capacitance line which extends along one peripheral edge of said pixel electrode in the area other than the crossing region of storage capacitance line and image signal line within one pixel area;    connecting extended part of said storage capacitance line with said image signal line in said overlapped area of extended part of said storage capacitance line and said image signal line; and    separating a region between a region closest to said storage capacitance line from said storage capacitance line in a connected area of extended part of said storage capacitance line and said image signal line.    
     
     
         10 . The method of  claim 9 , wherein said step of forming overlapped area of extended part of said storage capacitance line and said image signal line further including a step of forming at least two overlapped area of extended part of extended part of said storage capacitance line and said image signal line within one pixel region.  
     
     
         11 . The method of  claim 9  or  10 , wherein a process in which in said overlapped area of extended part of said storage capacitance line and said image signal line, extended part of said storage capacitance line and said image signal line are connected includes a process in which extended part of said storage capacitance line and said image signal line are connected by laser radiation.  
     
     
         12 . The method of  claim 9  or  10 , wherein said step of is separating a region between a region closest to said storage capacitance line from said storage capacitance line in a connected area of extended part of said storage capacitance line and said image signal line further includes a step of separating a region between a region closest to said storage capacitance line from said storage capacitance line by laser radiation process in a connected area of extended part of said storage capacitance line and said image signal line.  
     
     
         13 . The method of  claim 9 , wherein said step of separating a region between a region closest to said storage capacitance line from said storage capacitance line in a connected area of extended part of said storage capacitance line and said image signal line is replaced to a step of separating extended part of the storage capacitance line which extends along the opposite edge of one peripheral edge of said pixel electrode from said pixel electrode in a connected area of extended part of said storage capacitance line and said image signal line, and also in a region including a region between a region closest to said storage capacitance line and said storage capacitance line, being parallel to said storage capacitance line.  
     
     
         14 . The method of  claim 13 , wherein said step of separating extended part of the storage capacitance line which extends along the opposite edge of one peripheral edge of said pixel electrode is separated from said pixel electrode in a connected area of extended part of said storage capacitance line and said image signal line, and also in a region including a region between a region closest to said storage capacitance line and said storage capacitance line, being parallel to said storage capacitance line is replaced to a step of separating extended part of the storage capacitance line which extends along the opposite edge of one peripheral edge of said pixel electrode from said pixel electrode by a laser radiation in a connected area of extended part of said storage capacitance line and said image signal line, and also in a region including a region between a region closest to said storage capacitance line and said storage capacitance line, being parallel to said storage capacitance line.