Optically and electrically programmable silicided polysilicon fuse device

Abstract

A silicided polysilicon based fuse device that is programmable by optical and electrical energy in the polysilicon layer without damage to nearby structures, comprising: a Si substrate; an insulating layer disposed on the substrate; and a fuse device section comprising poly-Si/a silicide/ and a barrier layer, the fuse device section forming an electrical discontinuity in the poly Si layer in response to an electrical pulse or an optical pulse applied to it.

I claim:  
     
         1 . A silicided polysilicon based fuse device that is programmable by optical and electrical energy in the polysilicon layer without damage to nearby structures, comprising: 
 a Si substrate;    an insulating layer disposed on said substrate; and    a fuse device section comprising poly Si/a silicide/and a barrier layer, said fuse device section showing a local increase in its resistance due to the application of an electrical pulse applied across it or by the application of an optical beam over it.    
     
     
         2 . The silicided Poly silicon based fuse device of  claim 1  wherein said barrier layer is SiN.  
     
     
         3 . The silicided Poly silicon based fuse device of  claim 1  wherein said insulating layer silicon dioxide.  
     
     
         4 . The silicided Poly silicon based fuse device of  claim 3  wherein said insulating layer is silicon nitride.  
     
     
         5 . The silicided Poly silicon based fuse device of  claim 1  wherein said silicide is selected from the group consisting of cobalt silicide, titanium silicide, tantalum silicide and platinum silicide.  
     
     
         6 . The silicided poly silicon based fuse device of  claim 3 , wherein said silicide is cobalt silicide.  
     
     
         7 . The silicided Poly silicon based fuse device of  claim 3  wherein said silicide is titanium silicide.  
     
     
         8 . The silicided Poly silicon based fuse device of  claim 3  wherein said silicide is tungsten silicide.  
     
     
         9 . The silicided Poly silicon based fuse device of  claim 3 , wherein said silicide is tantalum silicide.  
     
     
         10 . The silicided Poly silicon based fuse device of  claim 3 , wherein said silicide is platinum silicide.  
     
     
         11 . The silicided Poly silicon based fuse device of  claim 2 , wherein said silicide is selected from the group consisting of cobalt silicide, titanium silicide, tungsten silicide, titanium silicide and platinum silicide.  
     
     
         12 . The silicided Poly silicon based fuse device of  claim 11 , wherein said silicide is cobalt silicide.  
     
     
         13 . The silicided Poly silicon based fuse device of  claim 11 , wherein said silicide is titanium silicide.  
     
     
         14 . The silicided Poly silicon based fuse device of  claim 11 , wherein said silicide is tungsten silicide.  
     
     
         15 . The silicided Poly silicon based fuse device of  claim 11 , wherein said silicide is tantalum silicide.  
     
     
         16 . The silicided Poly silicon based fuse device of  claim 11 , wherein said silicide is platinum silicide  
     
     
         17 . The silicided Poly silicon based fuse device of  claim 11 , wherein the programming potential is about 3.3V.  
     
     
         18 . The silicided Poly silicon based fuse device of  claim 11 , wherein the programming is by an optical beam.