Method of forming inter-dielectric layer in semiconductor device

Abstract

The present invention relates to a method of forming an interlayer dielectric film in a semiconductor device. More particularly, the present invention selectively forms an insulating film spacer only at a region where a plug is formed between metal lines and removes the insulating film spacer at a region where the plug is not formed to lower the aspect ratio between the metal lines, in a process of burying an insulating material between the metal lines to electrically insulate them. Therefore, the present invention can easily bury the insulating material even between the metal lines having a narrow gap without voids.

What is claimed is:  
     
         1 . A method of forming an interlayer dielectric film in a semiconductor device, comprising the steps of: 
 forming an insulating film spacer only on the sidewall of conductive layer patterns at a region where a contact plug will be formed and then forming an interlayer dielectric film on the entire surface.    
     
     
         2 . The method of forming an interlayer dielectric film in a semiconductor device as claimed in  claim 1 , wherein said conductive layer patterns are word lines or bit lines.  
     
     
         3 . A method of forming an interlayer dielectric film in a semiconductor device, comprising the steps of: 
 forming conductive layer patterns of a given pattern and an insulating film spacer on the sidewalls of said conductive layer patterns through a common process;    removing said insulating film spacer formed in a region other than a region where a contact plug will be formed; and    forming an interlayer dielectric film on the entire surface.    
     
     
         4 . The method of forming an interlayer dielectric film in a semiconductor device as claimed in  claim 3 , wherein said conductive layer patterns are word lines or bit lines.  
     
     
         5 . A method of forming an interlayer dielectric film in a semiconductor device, comprising the steps of: 
 forming conductive layer patterns of a given pattern through a common process;    forming an interlayer dielectric film on the entire surface; and    removing said interlayer dielectric film at a region where a contact plug will be formed and then forming an insulating film spacer on the sidewall of said conductive layer patterns.    
     
     
         6 . The method of forming an interlayer dielectric film in a semiconductor device as claimed in  claim 5 , wherein said conductive layer patterns are word lines or bit line.  
     
     
         7 . A method of forming an interlayer dielectric film in a semiconductor device, comprising the steps of: 
 forming conductive layer patterns of a given pattern and an insulating film spacer on the sidewall of said conductive layer patterns through a common process;    burying a conductive material between said conductive layer patterns;    removing said conductive material only at a given region and remaining said conductive material at remaining regions to form a contact plug; and    burying an interlayer dielectric film between said conductive layer patterns at a region from which said conductive material is removed.    
     
     
         8 . The method of forming an interlayer dielectric film in a semiconductor device as claimed in  claim 7 , wherein said conductive layer patterns are word lines or bit lines.