US2003017785A1PendingUtilityA1

Metal polish composition and polishing method

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Priority: Mar 2, 2001Filed: Feb 28, 2002Published: Jan 23, 2003
Est. expiryMar 2, 2021(expired)· nominal 20-yr term from priority
Inventors:Kazumasa UedaYasuo Matsumi
H10P 52/403C23F 3/00C09G 1/02C09K 3/14
32
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Claims

Abstract

A metal polish composition comprising a chelate resin particle and an inorganic particle and a polishing method of a metal with said metal polish composition.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A metal polish composition comprising a chelate resin particle and an inorganic particle.  
     
     
         2 . The metal polish composition according to  claim 1 , wherein the composition further comprises a polishing accelerator.  
     
     
         3 . The metal polish composition according to  claim 2 , wherein the polishing accelerator is nitric acid or nitrate.  
     
     
         4 . The metal polish composition according to  claim 2 , wherein the polishing accelerator is nitric acid or ammonium nitrate.  
     
     
         5 . The metal polish composition according to  claim 1 , wherein the chelate resin particle is a chelate resin particle having a functional group containing at least one atom selected from the group consisting of an oxygen atom, nitrogen atom, sulfur atom and phosphorus atom.  
     
     
         6 . The metal polish composition according to  claim 1 , wherein the chelate resin particle is a chelate resin particle having at least one functional group selected from the group consisting of an aminocarboxylate group, aminophosphonate group and iminodiacetate group.  
     
     
         7 . The metal polish composition according to  claim 1 , wherein the functional group of the chelate resin particle is a functional group having at least one counter ion selected from the group consisting of a hydrogen ion and ammonium ions represented by the following general formula:  
       +NR 1 R 2 R 3 R 4    
       wherein, R 1 , R 2 , R 3  and R 4  each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a benzyl group.  
     
     
         8 . The metal polish composition according to  claim 7 , wherein R 1 , R 2 , R 3  and R 4  represent a hydrogen atom.  
     
     
         9 . The metal polish composition according to  claim 1 , wherein the chelate resin particle is a particle having an average particle size of 1.0 μm or less.  
     
     
         10 . The metal polish composition according to  claim 1 , wherein the zeta potential of a chelate resin particle and the zeta potential of an inorganic particle are in the same sign.  
     
     
         11 . The metal polish composition according to  claim 1 , wherein the inorganic particle is colloidal silica.  
     
     
         12 . The metal polish composition according to  claim 1 , wherein a ratio of average particle sizes (A/B) is 30 or more when the average particle size of chelate resin particles is represented by A and the average particle size of inorganic particles is represented by B.  
     
     
         13 . The metal polish composition according to  claim 2 , wherein the composition further comprises an oxidizer.  
     
     
         14 . The metal polish composition according to  claim 13 , wherein the oxidizer is hydrogen peroxide.  
     
     
         15 . The metal polish composition according to  claim 1 , wherein an aqueous solution has a pH of 3 to 9 when made into an aqueous solution.  
     
     
         16 . The metal polish composition according to  claim 1 , wherein the metal is a metal containing tantalum.  
     
     
         17 . The metal polish composition according to  claim 1 , wherein the metal is a metal tantalum or tantalum nitride.  
     
     
         18 . A polishing method of a metal with the metal polish composition according to  claim 1 .  
     
     
         19 . A polishing method of a metal film of a semiconductor device with the metal polish composition according to  claim 1.

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