System and method for selectively increasing surface temperature of an object

Abstract

A system and method for selectively increasing the thermal effect of a radiant energy source to the surface of an object relative to the substrate is described in the context of rapid thermal processing of semiconductor wafers, and apparatus produced therefrom. A radiation-absorptive atmosphere is introduced between the radiant energy source and the object to increase conductive heat transfer to the surface of the object and reduce the available radiant heat transfer to the substrate, thereby increasing the thermal effect to the surface relative to the substrate.

What is claimed is:  
     
         1 . A method of heating an object, comprising: 
 emitting radiation of at least one wavelength capable of heating the object thus producing at least one wavelength of emitted radiation;    absorbing radiation of the at least one wavelength of emitted radiation in a radiation-absorptive atmosphere; and    transferring heat to the object through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         2 . The method of  claim 1  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising at least one radiation-absorptive gas.  
     
     
         3 . The method of  claim 1  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising at least one radiation-absorptive gas and at least one transparent gas.  
     
     
         4 . The method of  claim 1  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising at least one radiation-absorptive gas, further wherein the at least one radiation-absorptive gas is a gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O.  
     
     
         5 . The method of  claim 1  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising at least one radiation-absorptive gas and at least one transparent gas, further wherein the at least one radiation-absorptive gas is a gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O, still further wherein the at least one transparent gas is a gas selected from the group consisting of Ar and N 2 .  
     
     
         6 . The method of  claim 1  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising: 
 substantially 10-80 mol % Ar;  
 substantially 10-40 mol % H 2 ; and  
 substantially 10-50 mol % H 2 O.  
 
     
     
         7 . The method of  claim 1  wherein emitting radiation of at least one relevant wavelength capable of heating the object further comprises emitting at least one wavelength in the range of 0.5 to 3.0 μm.  
     
     
         8 . The method of  claim 1  further comprising maintaining the pressure of the radiation-absorptive atmosphere below atmospheric.  
     
     
         9 . The method of  claim 1  further comprising maintaining the pressure of the radiation-absorptive atmosphere at or above atmospheric.  
     
     
         10 . A radiant heating system for heating an object, comprising: 
 a radiation source for directing radiation toward the object; and    a radiation-absorptive atmosphere positioned between the radiation source and the object.    
     
     
         11 . The radiant heating system of  claim 10  wherein the radiation-absorptive atmosphere comprises at least one radiation-absorptive gas.  
     
     
         12 . The radiant heating system of  claim 10  wherein the radiation-absorptive atmosphere comprises at least one radiation-absorptive gas and at least one transparent gas.  
     
     
         13 . The radiant heating system of  claim 10  wherein the radiation-absorptive atmosphere comprises at least one radiation-absorptive gas, further wherein the at least one radiation-absorptive gas is a gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O.  
     
     
         14 . The radiant heating system of  claim 10  wherein the radiation-absorptive atmosphere comprises at least one radiation-absorptive gas and at least one transparent gas, further wherein the at least one radiation-absorptive gas is a gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O, still further wherein the at least one transparent gas is a gas selected from the group consisting of Ar and N 2 .  
     
     
         15 . The radiant heating system of  claim 10  wherein the radiation-absorptive atmosphere comprises: 
 substantially 10-80 mol % Ar;  
 substantially 10-40 mol % H 2 ; and  
 substantially 10-50 mol % H 2 O.  
 
     
     
         16 . The radiant heating system of  claim 10  wherein the radiation source emits radiation comprising at least one wavelength in the range of 0.5 to 3.0 μm.  
     
     
         17 . A method of processing a semiconductor wafer, comprising: 
 emitting radiation of at least one wavelength capable of heating the semiconductor wafer thus producing at least one wavelength of emitted radiation;    absorbing radiation of the at least one wavelength of emitted radiation in a radiation-absorptive atmosphere; and    transferring heat to the semiconductor wafer through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         18 . The method of  claim 17  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising at least one radiation-absorptive gas.  
     
     
         19 . The method of  claim 17  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising at least one radiation-absorptive gas and at least one transparent gas.  
     
     
         20 . The method of  claim 17  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising at least one radiation-absorptive gas, further wherein the at least one radiation-absorptive gas is a gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O.  
     
     
         21 . The method of  claim 17  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising at least one radiation-absorptive gas and at least one transparent gas, further wherein the at least one radiation-absorptive gas is a gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O, still further wherein the at least one transparent gas is a gas selected from the group consisting of Ar and N 2 .  
     
     
         22 . The method of  claim 17  wherein absorbing radiation occurs in a radiation-absorptive atmosphere comprising: 
 substantially 10-80 mol % Ar;  
 substantially 10-40 mol % H 2 ; and  
 substantially 10-50 mol % H 2 O.  
 
     
     
         23 . The method of  claim 17  wherein emitting radiation of at least one relevant wavelength capable of heating the semiconductor wafer further comprises emitting at least one wavelength in the range of 0.5 to 3.0 μm.  
     
     
         24 . The method of  claim 17  further comprising maintaining the pressure of the radiation-absorptive atmosphere below atmospheric.  
     
     
         25 . The method of  claim 17  further comprising maintaining the pressure of the radiation-absorptive atmosphere at or above atmospheric.  
     
     
         26 . An apparatus, comprising: 
 a semiconductor die having a reduced thermal budget, wherein the semiconductor die is exposed to emitted radiation of at least one wavelength capable of heating the semiconductor die and a radiation-absorptive atmosphere capable of absorbing radiation of the at least one wavelength of emitted radiation, further wherein the semiconductor die absorbed heat through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         27 . The apparatus of  claim 26 , wherein the at least one wavelength of emitted radiation comprises at least one wavelength in the range of 0.5 to 3.0 μm.  
     
     
         28 . The apparatus of  claim 26 , wherein the radiation-absorptive atmosphere comprises at least one radiation-absorptive gas and at least one transparent gas, further wherein the at least one radiation-absorptive gas is a gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O, still further wherein the at least one transparent gas is a gas selected from the group consisting of Ar and N 2 .  
     
     
         29 . An apparatus, comprising: 
 a semiconductor die having a reduced thermal budget, wherein the semiconductor die is exposed to emitted radiation of at least one wavelength capable of heating the semiconductor die and a radiation-absorptive atmosphere capable of absorbing radiation of the at least one wavelength of emitted radiation, further wherein the radiation-absorptive atmosphere comprises at least one radiation-absorptive gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O, still further wherein the semiconductor die absorbed heat through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         30 . An apparatus, comprising: 
 a semiconductor die having a reduced thermal budget, wherein the semiconductor die is exposed to emitted radiation of at least one wavelength capable of heating the semiconductor die and a radiation-absorptive atmosphere capable of absorbing radiation of the at least one wavelength of emitted radiation, further wherein the radiation-absorptive atmosphere comprises substantially 10-80 mol % Ar, substantially 10-40 mol % H 2 , and substantially 10-50 mol % H 2 O, still further wherein the semiconductor die absorbed heat through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         31 . A radiant heating system for heating an object, comprising: 
 a radiant heating means for emitting radiation of at least one relevant wavelength capable of heating the object; and    a radiation-absorbing means for absorbing at least one relevant wavelength from the radiant heating means and conducting absorbed energy to the object.    
     
     
         32 . A method of processing a semiconductor wafer having a surface and a substrate, comprising: 
 surrounding the semiconductor wafer surface with a radiation-absorptive atmosphere;    emitting radiation capable of heating the semiconductor wafer and the radiation-absorptive atmosphere thus producing emitted radiation;    absorbing at least some of the emitted radiation in the radiation-absorptive atmosphere;    absorbing at least some of the emitted radiation in the semiconductor wafer; and    conducting heat to the semiconductor wafer from the absorbed energy in the radiation-absorptive atmosphere such that the combined energy transfer to the surface of the semiconductor wafer exceeds the energy transfer to the substrate.    
     
     
         33 . A method of processing a semiconductor wafer having a surface and a substrate, comprising: 
 emitting radiation of at least one wavelength capable of heating the semiconductor wafer thus producing at least one wavelength of emitted radiation;    absorbing radiation of the at least one wavelength of emitted radiation in a radiation-absorptive atmosphere, wherein the radiation-absorptive atmosphere comprises at least one gas selected from the group consisting of H 2 O, Ar, H 2 , CO 2 , NH 3 , N 2 , NO 2 , N 2 O 3 , N 2 O 4 , N 2 O 5 , NO, N 2 O, He, O 3 , Kr, Ne, Xe, Rn and Cl 2 ; and    transferring heat to the semiconductor wafer through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         34 . A circuit module, comprising: 
 at least two semiconductor dies with at least one semiconductor die having a reduced thermal budget, wherein the at least one semiconductor die having a reduced thermal budget is exposed to emitted radiation of at least one wavelength capable of heating the at least one semiconductor die having a reduced thermal budget and a radiation-absorptive atmosphere capable of absorbing radiation of the at least one wavelength of emitted radiation, further wherein the at least one semiconductor die having a reduced thermal budget absorbed heat through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         35 . The circuit module of  claim 34 , wherein the at least two semiconductor dies comprise at least two semiconductor dies having differing functionality.  
     
     
         36 . The circuit module of  claim 34 , wherein the at least two semiconductor dies comprise a semiconductor die in a protective casing.  
     
     
         37 . The circuit module of  claim 34 , wherein the at least one wavelength of emitted radiation comprises at least one wavelength in the range of 0.5 to 3.0 μm.  
     
     
         38 . The circuit module of  claim 34 , wherein the radiation-absorptive atmosphere comprises at least one radiation-absorptive gas and at least one transparent gas, further wherein the at least one radiation-absorptive gas is a gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O, still further wherein the at least one transparent gas is a gas selected from the group consisting of Ar and N 2 .  
     
     
         39 . A circuit module, comprising: 
 at least two semiconductor dies with at least one semiconductor die having a reduced thermal budget, wherein the at least one semiconductor die having a reduced thermal budget is exposed to emitted radiation of at least one wavelength capable of heating the at least one semiconductor die having a reduced thermal budget and a radiation-absorptive atmosphere capable of absorbing radiation of the at least one wavelength of emitted radiation, further wherein the radiation-absorptive atmosphere comprises at least one radiation-absorptive gas selected from, the group consisting of H 2 O, CO 2 , NH 3  and N 2 O, still further wherein the at least one semiconductor die having a reduced thermal budget absorbed heat through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         40 . A circuit module, comprising: 
 at least two semiconductor dies with at least one semiconductor die having a reduced thermal budget, wherein the at least one semiconductor die having a reduced thermal budget is exposed to emitted radiation of at least one wavelength capable of heating the at least one semiconductor die having a reduced thermal budget and a radiation-absorptive atmosphere capable of absorbing radiation of the at least one wavelength of emitted radiation, further wherein the radiation-absorptive atmosphere comprises substantially 10-80 mol % Ar, substantially 10-40 mol % H 2 , and substantially 10-50 mol % H 2 O, still further wherein the at least one semiconductor die having a reduced thermal budget absorbed heat through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         41 . An electronic system, comprising: 
 at least one circuit module, wherein the at least one circuit module comprises at least two semiconductor dies with at least one semiconductor die having a reduced thermal budget, wherein the at least one semiconductor die having a reduced thermal budget is exposed to emitted radiation of at least one wavelength capable of heating the at least one semiconductor die having a reduced thermal budget and a radiation-absorptive atmosphere capable of absorbing radiation of the at least one wavelength of emitted radiation, further wherein the at least one semiconductor die having a reduced thermal budget absorbed heat through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         42 . The electronic system of  claim 41 , further comprising a user interface.  
     
     
         43 . The electronic system of  claim 41 , further comprising mechanical components.  
     
     
         44 . An electronic system, comprising: 
 at least one circuit module, wherein the at least one circuit module comprises at least two semiconductor dies with at least one semiconductor die having a reduced thermal budget, wherein the at least one semiconductor die having a reduced thermal budget is exposed to emitted radiation of at least one wavelength capable of heating the at least one semiconductor die having a reduced thermal budget and a radiation-absorptive atmosphere capable of absorbing radiation of the at least one wavelength of emitted radiation, further wherein the radiation-absorptive atmosphere comprises at least one radiation-absorptive gas selected from the group consisting of H 2 O, CO 2 , NH 3  and N 2 O, still further wherein the at least one semiconductor die having a reduced thermal budget absorbed heat through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         45 . A circuit module, comprising: 
 at least two semiconductor dies with at least one semiconductor die having a reduced thermal budget, wherein the at least one semiconductor die having a reduced thermal budget is exposed to emitted radiation of at least one wavelength capable of heating the at least one semiconductor die having a reduced thermal budget and a radiation-absorptive atmosphere capable of absorbing radiation of the at least one wavelength of emitted radiation, further wherein the radiation-absorptive atmosphere comprises substantially 10-80 mol % Ar, substantially 10-40 mol % H 2 , and substantially 10-50 mol % H 2 O, still further wherein the at least one semiconductor die having a reduced thermal budget absorbed heat through a combination of radiant heat transfer from the at least one wavelength of emitted radiation and conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         46 . A method of processing a semiconductor wafer having a surface and a substrate, comprising: 
 emitting radiation of at least one wavelength in the range of 0.5 to 3.0 μm;    absorbing radiation of the at least one wavelength in the range of 0.5 to 3.0 μm in a radiation-absorptive atmosphere, wherein the radiation-absorptive atmosphere comprises substantially 10-80 mol % Ar, substantially 10-40 mol % H 2 , and substantially 10-50 mol % H 2 O;    transferring heat to the semiconductor wafer through radiant heat transfer from the at least one wavelength in the range of 0.5 to 3.0 μm; and    transferring heat to the surface of the semiconductor wafer through conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         47 . A method of annealing glass on a surface of a semiconductor wafer having a substrate, comprising: 
 emitting radiation of at least one wavelength capable of heating the semiconductor wafer thus producing at least one wavelength of emitted radiation;    absorbing radiation of the at least one wavelength of emitted radiation in a radiation-absorptive atmosphere, wherein the radiation-absorptive atmosphere comprises at least one gas selected from the group consisting of H 2 O, Ar, H 2 , CO 2 , NH 3 , N 2 , NO 2 , N 2 O 3 , N 2 O 4 , N 2 O 5 , NO, N 2 O, He, O 3 , Kr, Ne, Xe, Rn and Cl 2 ;    transferring heat to the semiconductor wafer through radiant heat transfer from the at least one wavelength of emitted radiation; and    transferring heat to the surface of the semiconductor wafer through conductive heat transfer from the radiation-absorptive atmosphere.    
     
     
         48 . A method of annealing glass on a surface of a semiconductor wafer having a substrate, comprising: 
 emitting radiation of at least one wavelength in the range of 0.5 to 3.0 μm;    absorbing radiation of the at least one wavelength in the range of 0.5 to 3.0 μm in a radiation-absorptive atmosphere, wherein the radiation-absorptive atmosphere comprises substantially 10-80 mol % Ar, substantially 10-40 mol % H 2 , and substantially 10-50 mol % H 2 O;    transferring heat to the semiconductor wafer through radiant heat transfer from the at least one wavelength in the range of 0.5 to 3.0 μm; and    transferring heat to the glass through conductive heat transfer from the radiation-absorptive atmosphere.