Semiconductor device and fabricating method thereof

Abstract

To effectively crystallize an amorphous semiconductor film comprising silicon by utilizing nickel element and remove nickel element contributed to the crystallization, a mask 103 is provided on an amorphous silicon film 102, oxide film patterns 107 and 108 including nickel are formed, phosphorus is doped in a region 109, thereafter, heating is performed, nickel element is diffused via paths 110 and 111 and nickel element diffuses in the amorphous silicon film and gettered by phosphorus at the region 109 by which crystallization of diffusion of nickel and gettering of nickel can be carried out simultaneously.

What is claimed is:  
     
         1 . A semiconductor device having a CPU, said CPU comprising: 
 a crystalline semiconductor film over a substrate; and    a gate insulating film on the crystalline semiconductor film; and    a gate electrode on the gate insulating film,    wherein crystal grains in the crystalline semiconductor film extend in a lateral direction parallel to the substrate.