US2003006451A1PendingUtilityA1

Structure of flash memory

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Assignee: MACRONIX INT CO LTDPriority: Mar 22, 2001Filed: Apr 24, 2002Published: Jan 9, 2003
Est. expiryMar 22, 2021(expired)· nominal 20-yr term from priority
Inventors:Kent Kuohua Chang
H10D 64/035H10D 64/681
38
PatentIndex Score
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Claims

Abstract

A structure of a flash memory having a tunnel oxide layer with high reliability, low defect and interface trap, manufactured by using a process of semi-atmospheric pressure chemical vapor deposition (SPACVD) and tetra-ethyl-ortho-silicate (TEOS) reactant, wherein the SAPCVD process is performed accompanied with a reaction temperature between about 600° C. and about 750° C. and a reaction pressure between about 340 Torr and about 500 Torr to react TEOS and oxygen.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A structure of a flash memory, which can improve the reliability of the flash memory, the structure of a flash memory comprises: 
 a tunnel oxide layer located on a substrate;    a floating gate located on the tunnel oxide layer; and    an interpoly dielectric layer located on the floating gate, wherein the interpoly dielectric layer comprises an oxide layer, a nitride layer and a semi-atmospheric pressure chemical vapor deposition (SAPCVD) oxide layer, wherein the SAPCVD oxide layer is formed by a semi-atmospheric pressure chemical vapor deposition process.    
     
     
         2 . The structure according to  claim 1 , wherein the oxide layer, the nitride layer and the SAPCVD oxide layer in a stacked structure from bottom to top are located on the floating gate.  
     
     
         3 . The structure according to  claim 1 , wherein a reaction temperature of the semi-atmospheric pressure chemical vapor deposition process is between about 600° C. and 750° C.  
     
     
         4 . The structure according to  claim 1 , wherein a reaction temperature of the semi-atmospheric pressure chemical vapor deposition process is about 680° C.  
     
     
         5 . The structure according to  claim 1 , wherein a reaction pressure of the semi-atmospheric pressure chemical vapor deposition process is between about 340 Torr and 550 Torr.  
     
     
         6 . The structure according to  claim 1 , wherein a reaction pressure of the semi-atmospheric pressure chemical vapor deposition process is about 400 Torr.  
     
     
         7 . The structure according to  claim 1 , wherein the semi-atmospheric pressure chemical vapor deposition process further comprises the use of tetra-ethyl-ortho-silicate (TEOS) and oxygen.  
     
     
         8 . The structure according to  claim 1 , wherein a thickness of the SAPCVD oxide layer is between about 20 Å and 80 Å.  
     
     
         9 . The structure according to  claim 1 , wherein a thickness of the SAPCVD oxide layer is about 40 Å.

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