Ultra-fast nucleic acid sequencing device and a method for making and using the same

Abstract

A system and method employing at least one semiconductor device having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand, proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-type regions implanted in a p-type semiconductor layer or two p-type regions implanted in an n-type semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand. The current has characteristics representative of the component of the polymer, such as characteristics representative of the detected base of the DNA or RNA strand.

What is claimed is:  
     
         1 . A system for detecting at least one polymer, comprising: 
 at least one semiconductor device having at least one detecting region, adapted to detect a charge representative of a component of said polymer proximate to said detecting region.    
     
     
         2 . A system as claimed in  claim 1 , wherein: 
 said component includes a base in a nucleic acid strand; and    said detecting region is adapted to detect said charge representative of said base in said nucleic acid strand.    
     
     
         3 . A system as claimed in  claim 1 , wherein: 
 said detecting region is further adapted to generate a signal representative of said detected charge.    
     
     
         4 . A system as claimed in  claim 1 , wherein: 
 said detecting region includes a region of said semiconductor device defining an opening in said semiconductor device having a cross-section sufficient to enable said polymer to enter said opening, such that said detecting region is adapted to detect said charge of said component in said opening.    
     
     
         5 . A system as claimed in  claim 4 , further comprising: 
 an excitation device, adapted to generate movement in said semiconductor device to facilitate movement of said polymer through said opening.    
     
     
         6 . A system as claimed in  claim 1 , wherein: 
 said detecting region includes a region of said semiconductor device defining a recess in said semiconductor device, such that said detecting region is adapted to detect said charge of said component in said recess.    
     
     
         7 . A system as claimed in  claim 1 , wherein: 
 said semiconductor device includes a plurality of said detecting regions; and    each said detecting region is adapted to detect a charge representative of a component of said at least one polymer proximate thereto.    
     
     
         8 . A system as claimed in  claim 1 , wherein: 
 said semiconductor device further includes at least two doped regions; and    said detecting region is adapted to pass a current between said two doped regions in response to a presence of said component proximate to said detecting region.    
     
     
         9 . A system as claimed in  claim 1 , wherein: 
 said semiconductor device includes a plurality of doped regions, and a respective detecting region associated with each respective pair of said doped regions, such that each said respective detecting region is adapted, in response to a presence of a component proximate thereto, to pass a respective current between its said respective pair of doped regions.    
     
     
         10 . A system as claimed in  claim 1 , further comprising: 
 a plurality of said semiconductor devices.    
     
     
         11 . A system as claimed in  claim 1 , further comprising: 
 a detector, adapted to detect a signal generated by said detecting region in response to said component proximate thereto.    
     
     
         12 . A method for detecting at least one polymer, comprising the steps of: 
 positioning a portion of said polymer proximate to a detecting region of at least one semiconductor device; and    at said detecting region, detecting a charge representative of a component of said polymer proximate to said detecting region.    
     
     
         13 . A method as claimed in  claim 12 , wherein: 
 said component includes a base in a nucleic acid strand; and    said detecting step detects said charge representative of said base in said nucleic acid strand.    
     
     
         14 . A method as claimed in  claim 12 , further comprising the step of: 
 generating at said detecting region a signal representative of said detected charge.    
     
     
         15 . A method as claimed in  claim 12 , wherein: 
 said detecting region includes a region of said semiconductor device defining an opening in said semiconductor device having a cross-section sufficient to enable said polymer to enter said opening; and    said detecting step detects said charge of said component in said opening.    
     
     
         16 . A method as claimed in  claim 15 , further comprising the step of: 
 generating movement in said semiconductor device to facilitate movement of said polymer through said opening.    
     
     
         17 . A method as claimed in  claim 12 , wherein: 
 said detecting region includes a region of said semiconductor device defining a recess in said semiconductor device; and    said detecting step detects said charge of said component in said recess.    
     
     
         18 . A method as claimed in  claim 12 , wherein: 
 said semiconductor device includes a plurality of said detecting regions; and    said detecting step includes the step of detecting, at each said detecting region, a charge representative of a component of said at least one polymer proximate thereto.    
     
     
         19 . A method as claimed in  claim 12 , wherein: 
 said semiconductor device further includes at least two doped regions; and    said method further includes the step of passing a current between said two doped regions in response to a presence of said component proximate to said detecting region.    
     
     
         20 . A method as claimed in  claim 12 , wherein: 
 said semiconductor device includes a plurality of doped regions, and a respective detecting region associated with each respective pair of said doped regions; and    said method further includes the step of passing, at each said respective detecting region in response to a presence of a component proximate thereto, a respective current between its said respective pair of doped regions.    
     
     
         21 . A method as claimed in  claim 12 , wherein: 
 said positioning step positions a respective portion of each of a plurality of said polymers proximate to a respective detecting region of a respective semiconductor device; and    said detecting step detects, at each said respective detecting region, a charge representative of a component of said respective polymer proximate to said respective detecting region.    
     
     
         22 . A method as claimed in  claim 12 , further comprising the step of: 
 detecting a signal generated by said detecting region in response to said component proximate thereto.    
     
     
         23 . A method for manufacturing a device for detecting a polymer, comprising the steps of: 
 providing a semiconductor structure comprising at least one semiconductor layer; and    creating a detecting region in said semiconductor structure, said detecting region being adapted to detect a charge representative of a component of said polymer proximate to said detecting region.    
     
     
         24 . A method as claimed in  claim 23 , wherein: 
 said component includes a base in a nucleic acid strand; and    said creating step creates said detecting region which is adapted to detect said charge representative of said base in said nucleic acid strand.    
     
     
         25 . A method as claimed in  claim 23 , further comprising the step of: 
 creating an opening in said semiconductor structure, said opening having a cross-section sufficient to enable a portion of said polymer to pass therethrough, and being positioned in relation to said detecting region such that said detecting region is adapted to detect said charge representative of said component in said opening.    
     
     
         26 . A method as claimed in  claim 25 , wherein said opening creating step includes the step of: 
 forming an insulating layer on a wall of said semiconductor layer forming said opening to decrease said cross-section of said opening.    
     
     
         27 . A method as claimed in  claim 23 , further comprising the step of: 
 creating a recess in said semiconductor structure, positioned in relation to said detecting region such that said detecting region is adapted to detect said charge representative of said component in said recess.    
     
     
         28 . A method as claimed in  claim 23 , further comprising the steps of: 
 creating at least two doped regions in said semiconductor layer, said doped regions being positioned with respect to said detecting region such that said detecting region is adapted to pass a current between said doped regions in response to said component of said polymer proximate thereto.    
     
     
         29 . A method as claimed in  claim 28 , wherein: 
 said doped region creating step creates said doped regions having a first doping such that said doped regions are separated by a portion of said semiconductor layer having a second doping.    
     
     
         30 . A method as claimed in  claim 28 , wherein: 
 said doped region creating step creates said doped regions as a stack of doped regions, each having a first doping and being separated by a layer having a second doping.    
     
     
         31 . A method as claimed in  claim 28 , wherein: 
 each of said doped regions includes a p-type doping.    
     
     
         32 . A method as claimed in  claim 28 , wherein: 
 each of said doped regions includes an n-type doping.