Method and apparatus for manufacturing a semiconductor device and processing a substrate

Abstract

A substrate processing apparatus includes a CVD (chemical vapor deposition) processing chamber and a RTO (rapid thermal oxidation) processing chamber. In the CVD processing chamber, a film growing process, in which thin amorphous film is deposited on a substrate, and an impurity removing process, in which specific impurities included in the grown amorphous film are removed, are repeatedly performed multiple times to provide an impurity removed amorphous film with good step coverage. Thus treated amorphous film on the substrate is then crystallized in the RTO process chamber to provide a crystalline film.

What is claimed is:  
     
         1 . A method for manufacturing a semiconductor device, comprising the steps of: 
 (a) forming an amorphous film on a substrate;    (b) removing at least a portion of an impurity element included in the amorphous film; and    (c) sequentially repeating the forming step (a) and the removing step (b) multiple times to provide an impurity removed non-crystalline film on the substrate.    
     
     
         2 . The method of  claim 1 , wherein the forming step (a) and the removing step (b) are carried out in a same reaction chamber.  
     
     
         3 . The method of  claim 2 , wherein the forming step (a) and the removing step (b) are carried out at the same temperature.  
     
     
         4 . The method of  claim 1 , wherein the removing step (b) is carried out while rotating the substrate.  
     
     
         5 . The method of  claim 1 , wherein the amorphous film is an amorphous tantalum oxide film.  
     
     
         6 . The method of  claim 1 , wherein the removing step (b) is carried out by a plasma process.  
     
     
         7 . The method of  claim 1 , further comprising, after the step (c), the step (d) of performing a crystallization process to crystallize the non-crystalline film formed on the substrate.  
     
     
         8 . The method of  claim 7 , wherein the crystallization process is a rapid thermal oxidation process.  
     
     
         9 . A method for processing a substrate, comprising the steps of: 
 (a) forming an amorphous film on a substrate;    (b) removing at least a portion of an impurity element included in the amorphous film; and    (c) sequentially repeating the forming step (a) and the removing step (b) multiple times to provide an impurity removed non-crystalline film on the substrate.    
     
     
         10 . A substrate processing apparatus, comprising: 
 a processing chamber for processing a substrate;    a gas supply unit for providing a reactive gas into the processing chamber;    a plasma generation unit; and    a control unit,    wherein the control unit controls the substrate processing apparatus to sequentially repeat, in the processing chamber, a film forming process for depositing an amorphous film on the substrate through the use of the reactive gas and a plasma process for removing at least a portion of an impurity element included in the amorphous film through the use of the plasma generation unit.