US2002195058A1PendingUtilityA1

Apparatus for holding a wafer for use in a process chamber for fabricating a semiconductor device

17
Priority: Jun 20, 2001Filed: Oct 23, 2001Published: Dec 26, 2002
Est. expiryJun 20, 2021(expired)· nominal 20-yr term from priority
Inventors:Hong-Rok Choi
H10P 72/7614H10P 72/0434H10P 72/7611
17
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Claims

Abstract

An apparatus for holding a wafer for use in a process chamber for fabricating a semiconductor device, wherein there is provided a chuck for placing the wafer thereon and disposed to be movable in an up and down direction, a graphite disposed on the chuck and having at least one hole formed near an edge thereof, and a supporter for supporting the wafer to a given height having one end inserted in the hole. The graphite has sufficient conductivity to provide a temperature condition for carrying out a given process. The apparatus being capable of uniformly forming a deposition layer on a rear surface as well as a front surface of the wafer since the given process is carried out in a state wherein the wafer is supported to the given height.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . An apparatus for holding a wafer for use in a process chamber for fabricating a semiconductor device comprising: 
 a chuck for placing the wafer thereon and disposed to be movable in an up and down direction;    a graphite disposed on the chuck and having at least one hole formed near an edge thereof, the graphite having sufficient conductivity to provide a temperature condition for carrying out a given process; and    a supporter for supporting the wafer to a given height having one end inserted in the at least one hole near the edge of the graphite.    
     
     
         2 . An apparatus as claimed in  claim 1 , wherein the supporter comprises: 
 a cylindrical head for supporting the wafer, wherein the cylindrical head has a top end having a rounded surface coming into contact with the wafer; and    an insert disposed below the support to be inserted into the hole.    
     
     
         3 . An apparatus as claimed in  claim 2 , wherein the supporter further comprises a support disposed below the cylindrical head to project radially from a circumferential surface of the head.  
     
     
         4 . An apparatus as claimed in  claim 3 , wherein the support is ring-shaped.  
     
     
         5 . An apparatus as claimed in  claim 1 , wherein the at least one hole is three holes disposed in a shape of an equiangular triangle near the edge of the graphite.  
     
     
         6 . An apparatus as claimed in  claim 2 , wherein the hole is formed of three holes disposed at an equiangular triangle shape in the edge of the graphite.  
     
     
         7 . An apparatus as claimed in  claim 5 , wherein the supporter is formed of three pins inserted respectively into the three holes to support the edge of the wafer.  
     
     
         8 . An apparatus as claimed in  claim 6 , wherein the supporter is formed of three pins inserted respectively into the three holes to support the edge of the wafer.  
     
     
         9 . An apparatus as claimed in  claim 1 , wherein the supporter is formed of a material having a nature that is not changed by a process condition such as process gas, temperature, pressure and the like.  
     
     
         10 . An apparatus as claimed in  claim 2 , wherein the supporter is formed of a material having a nature that is not changed by a process condition such as process gas, temperature, pressure and the like.  
     
     
         11 . An apparatus as claimed in  claim 9 , wherein the supporter is disposed beyond the range of a moving path of a device for transferring the wafer.  
     
     
         12 . An apparatus as claimed in  claim 10 , wherein the supporter is disposed beyond the range of a moving path of a device for transferring the wafer.  
     
     
         13 . An apparatus as claimed in  claim 9 , wherein the supporter is formed of a quartz.  
     
     
         14 . An apparatus as claimed in  claim 10 , wherein the supporter is formed of a quartz.  
     
     
         15 . An apparatus as claimed in  claim 9 , wherein the supporter is formed of a silicon carbide.  
     
     
         16 . An apparatus as claimed in  claim 10 , wherein the supporter is formed of a silicon carbide.  
     
     
         17 . An apparatus as claimed in  claim 9 , wherein the supporter is formed of a ceramic.  
     
     
         18 . An apparatus as claimed in  claim 10 , wherein the supporter is formed of a ceramic.  
     
     
         19 . An apparatus as claimed in  claim 1 , wherein the given process is a process for forming a HSG.  
     
     
         20 . An apparatus as claimed in  claim 1 , wherein the given height is in a range of 5 to 11 mm.  
     
     
         21 . An apparatus as claimed in claim  20 , wherein the given height is in a range of 8 to 10 mm.

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