Vortex based CVD reactor

Abstract

Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.

It is claimed:  
     
         1 . A vortex based CVD reactor comprising: 
 a. a reactor base;    b. a reactor sidewall located above and secured to the reactor base;    c. a top located above, and secured and fitted to the reactor sidewall;    d. injector tubes tangentially oriented and secured to a reactor top;    e. a reactor interior comprised of inner surfaces of the reactor base, reactor side walls and a reactor top;    f. a heated densified carbon susceptor located in contact with a resistance heated chuck;    g. at least one lift yoke and ceramic wafer substrate support pin;    h. a robotic access port located in the reactor base, a positionable shutter aligned with the robotic access port; and,    i. an exhaust port located at the upper region of the reactor top:    
     
     
         2 . The reactor of  claim 1 , including tangentially oriented injector tubes for introducing chemical vapors into the reactor in tangential fashion, thereby creating spinning gas fields which cause a uniform boundary layer to form over the substrate whereby the chemical vapors deposit uniformly.  
     
     
         3 . A vortex based CVD reactor with a spinning gas field within the reactor interior, comprising the steps of: 
 a. introducing chemical vapors into a reactor interior simultaneously under sufficient pressure and at suitable temperature through injector tubes;    b. chemical vapors emanating from injector tubes and producing spinning gas fields;    c. orienting injector tubes to direct the spinning gas fields . containing chemical vapors tangentially with respect to the interior walls of the reactor sidewall;    d. rotating gas field moves downward due to the reduced diameter of the reactor;    e downward spiraling gas hits the lower surface and substrate and is subject to drag, loss of velocity from drag causes the gas to flow inward and upward to where the pressure is lower; and,    f. the gas spirals upward and out of a reactor exhaust.