Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device

Abstract

A method for depositing a semiconductor film on a wafer by making a source gas supplied flow almost horizontally to the surface of the wafer. When a process condition, e.g., the flow velocity or pressure of the source gas, should be changed, the source gas has its velocity and/or pressure changed so that the source gas is supplied at a substantially constant flow rate.

What is claimed is:  
     
         1 . An apparatus for depositing a semiconductor film on a wafer by making a source gas supplied flow almost horizontally to the surface of the wafer, the apparatus comprising: 
 a reactor, in which the wafer is placed and which has a gas inlet port for supplying the source gas onto the wafer;    velocity control means for controlling the flow velocity of the source gas; and    pressure control means for controlling the pressure of the source gas in the reactor,    wherein the velocity and pressure control means control the flow velocity and the pressure in such a manner as to keep the flow rate of the source gas near the gas inlet port substantially constant.