Method of fabricating improved buffer architecture for biaxially textured structures

Abstract

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO 2 , HfO 2 , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO 2 and/or HfO 2 . The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO 2 , HfO 2 , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO 2 and HfO 2 . The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1×10 −5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

What is claimed is:  
     
         1 . An epitaxial article, comprising: 
 a substrate having a metal surface; and    a single epitaxial layer on said surface of said substrate, said single epitaxial layer comprising at least one material selected from the group consisting of ZrO 2 , HfO 2 , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO 2  and HfO 2 .    
     
     
         2 . The article according to  claim 1  wherein said metal surface is crystalline.  
     
     
         3 . The article according to  claim 1  wherein said metal surface is biaxially-textured.  
     
     
         4 . The article according to  claim 1  wherein said substrate is a rolled and annealed biaxially-textured metal substrate having a surface.  
     
     
         5 . The article according to  claim 1  wherein said metal surface comprises at least one metal selected from the group consisting of Cu, Cu-based alloy, Co, Mo, Cd, Pd, Pt, Ag, Ni, and Ni-based alloy.  
     
     
         6 . The article according to  claim 1  wherein said metal surface comprises at least one metal selected from the group consisting of Ni and Ni-based alloys with at least one alloying agent selected from the group consisting of Co, Cr, V, Mo, W, and rare earth elements.  
     
     
         7 . The article according to  claim 1  wherein said epitaxial layer comprises at least one material selected from the group consisting of ZrO 2  and HfO 2  sub-units in the crystalline lattice of said epitaxial layer.  
     
     
         8 . The article according to  claim 1  wherein said epitaxial layer comprises at least one material having the structure ABO 3 , wherein A is selected from the group consisting of Ba, Ca, and Sr, and B is selected form the group consisting of Zr and Hf.  
     
     
         9 . An article according to  claim 1  wherein said epitaxial layer comprises YSZ.  
     
     
         10 . An epitaxial article, comprising: 
 a substrate having a metal surface;    a single epitaxial layer on said surface of said substrate, said single epitaxial layer comprising at least one material selected from the group consisting of ZrO 2 , HfO 2 , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO 2  and HfO 2 ; and    a superconducting layer deposited on said single epitaxial layer.    
     
     
         11 . The article according to  claim 10  wherein said metal surface is crystalline.  
     
     
         12 . The article according to  claim 10  wherein said metal surface is biaxially-textured.  
     
     
         13 . The article according to  claim 10  wherein said substrate is a rolled and annealed biaxially-textured metal substrate having a surface.  
     
     
         14 . The article according to  claim 10  wherein said metal surface comprises one or more metals selected from the group consisting of Cu, Cu-based alloy, Ag, Co, Mo, Cd, Pd, Pt, Ni, and Ni-based alloy.  
     
     
         15 . The article according to  claim 10  wherein said metal surface comprises at least one metal selected from the group consisting of Ni and Ni-based alloys with at least one alloying agent selected from the group consisting of Co, Cr, V, Mo, W, and rare earth elements.  
     
     
         16 . The article according to  claim 10  wherein said epitaxial layer comprises at least one material selected from the group consisting of ZrO 2  and HfO 2  sub-units in the crystalline lattice of said epitaxial layer.  
     
     
         17 . The article according to  claim 10  wherein said epitaxial layer comprises at least one material having the structure ABO 3 , wherein A is selected from the group consisting of Ba, Ca, and Sr, and B is selected form the group consisting of Zr and Hf.  
     
     
         18 . The article according to  claim 10  wherein said epitaxial layer comprises YSZ.  
     
     
         19 . The article according to  claim 10  wherein said superconducting layer comprises an oxide superconductor.  
     
     
         20 . The article according to  claim 10  wherein said superconducting layer comprises REBa 2 Cu 3 O 7 , where RE is a rare earth element.  
     
     
         21 . The article according to  claim 10  wherein said superconducting layer comprises YBa 2 Cu 3 O 7 .  
     
     
         22 . An epitaxial article, comprising: 
 a substrate having a metal surface;    an epitaxial buffer layer on said surface of said substrate, said epitaxial layer comprising at least one material selected from the group consisting of ZrO 2 , HfO 2 , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO 2  and HfO 2 ;    an epitaxial capping layer on said epitaxial buffer layer, said epitaxial capping layer being of a different composition than said epitaxial buffer layer; and    a superconducting layer deposited on said epitaxial capping layer.    
     
     
         23 . The article according to  claim 22  wherein said metal surface is crystalline.  
     
     
         24 . The article according to  claim 22  wherein said metal surface is biaxially-textured.  
     
     
         25 . The article according to  claim 22  wherein said substrate is a rolled and annealed biaxially-textured metal substrate having a surface.  
     
     
         26 . The article according to  claim 22  wherein said metal surface comprises one or more metals selected from the group consisting of Cu, Cu-based alloy, Ag, Co, Mo, Cd, Pt, Pd, Ni, and Ni-based alloy.  
     
     
         27 . The article according to  claim 22  wherein said metal surface comprises at least one metal selected from the group consisting of Ni and Ni-based alloys with at least one alloying agent selected from the group consisting of Co, Cr, V, Mo, W, and rare earth elements.  
     
     
         28 . The article according to  claim 22  wherein said epitaxial buffer layer comprises at least one material selected-from the group consisting of ZrO 2  and HfO 2  sub-units in the crystalline lattice of said epitaxial layer.  
     
     
         29 . The article according to  claim 22  wherein said epitaxial buffer layer comprises at least one material having the structure ABO 3 , wherein A is selected from the group consisting of Ba, Ca, and Sr, and B is selected form the group consisting of Zr and Hf.  
     
     
         30 . The article according to  claim 22  wherein said epitaxial buffer layer comprises YSZ.  
     
     
         31 . The article according to  claim 22  wherein said epitaxial capping layer comprises at least one material which is a rare earth oxide.  
     
     
         32 . The article according to  claim 22  wherein said epitaxial capping layer comprises at least one material selected from the group consisting of CeO 2  and Y 2 O 3 .  
     
     
         33 . The article according to  claim 22  wherein said epitaxial capping layer reduces the lattice mismatch between the superconducting layer and the epitaxial buffer layer.  
     
     
         34 . The article according to  claim 22  wherein said superconducting layer comprises an oxide superconductor.  
     
     
         35 . The article according to  claim 22  wherein said superconducting layer comprises REBa 2 Cu 3 O 7 , where RE is a rare earth element.  
     
     
         36 . An article according to  claim 22  wherein said superconducting layer comprises YBa 2 Cu 3 O 7 .  
     
     
         37 . A method for preparing an epitaxial article, comprising the steps of: 
 providing a substrate with a metal surface; and    depositing a single epitaxial layer comprising at least one material selected from the group consisting of ZrO 2 , HfO 2 , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO 2  and HfO 2 , wherein said epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1×10 −5  Torr.    
     
     
         38 . The method according to  claim 37  further comprising the step of providing a crystalline metal surface.  
     
     
         39 . The method according to  claim 37  further comprising the step of providing a biaxially-textured metal surface.  
     
     
         40 . The method according to  claim 37  further comprising the step of rolling and annealing a metal material to form a biaxially-textured substrate having a surface.  
     
     
         41 . The method according to  claim 37  further comprising the step of rolling and annealing one or more metals selected from the group consisting of Cu, Cu-based alloy, Ag, Co, Mo, Cd, Pd, Pt, Ni, and Ni-based alloy.  
     
     
         42 . The method according to  claim 37  further comprising the step of rolling and annealing one or more metals selected from the group consisting of Ni and Ni-based alloy with at least one alloying agent selected from the group consisting of Co, Cr, V, Mo, W, and rare earth elements.  
     
     
         43 . The method according to  claim 37  further comprising the step of depositing on the metal surface an epitaxial layer having at least one material selected from the group consisting of ZrO 2  and HfO 2  sub-units in the crystalline lattice of said epitaxial layer.  
     
     
         44 . The method according to  claim 37  further comprising the step of depositing on the metal surface an epitaxial layer having at least one material with the structure ABO 3 , wherein A is selected from the group consisting of Ba, Ca, and Sr, and B is selected from the group consisting of Zr and Hf.  
     
     
         45 . The method according to  claim 37  further comprising the step of depositing on the metal surface an epitaxial layer having YSZ.  
     
     
         46 . The method according to  claim 37  further comprising the step of depositing the epitaxial layer using pulsed-laser deposition.  
     
     
         47 . A method for preparing an epitaxial article, comprising the steps of: 
 providing a substrate with a metal surface;    depositing a single epitaxial layer comprising at least one material selected from the group consisting of ZrO 2 , HfO 2 , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO 2  and HfO 2 , wherein said epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1×10 −5  Torr; and    depositing a superconducting layer on the single epitaxial layer.    
     
     
         48 . The method according to  claim 47  further comprising the step of providing a crystalline metal surface.  
     
     
         49 . The method according to  claim 47  further comprising the step of providing a biaxially-textured metal surface.  
     
     
         50 . The method according to  claim 47  further comprising the step of rolling and annealing a metal material to form a biaxially-textured substrate having a surface.  
     
     
         51 . The method according to  claim 47  further comprising the step of rolling and annealing a metal substrate composed of one or more metals selected from the group consisting of Cu, Cu-based alloy, Co, Mo, Cd, Pd, Pt, Ag, Ni, and Ni-based alloy.  
     
     
         52 . The method according to  claim 47  further comprising the step of rolling and annealing a metal substrate composed of one or more metals selected from the group consisting of Ni and Ni-based alloy with at least one alloying agent selected from the group consisting of Co, Cr, V, Mo, W, and rare earth elements.  
     
     
         53 . The method according to  claim 47  further comprising the step of depositing on the metal surface an epitaxial layer having at least one material selected from the group consisting of ZrO 2  and HfO 2  sub-units in the crystalline lattice of said epitaxial layer.  
     
     
         54 . The method according to  claim 47  further comprising the step of depositing on the metal surface an epitaxial layer having at least one material with the structure ABO 3 , wherein A is selected from the group consisting of Ba, Ca, and Sr, and B is selected form the group consisting of Zr and Hf.  
     
     
         55 . The method according to  claim 47  further comprising the step of depositing on the metal surface an epitaxial layer having YSZ.  
     
     
         56 . The method according to  claim 47  further comprising the step of depositing on the epitaxial layer a superconductor layer having an oxide superconductor.  
     
     
         57 . The method according to  claim 47  further comprising the step of depositing on the epitaxial layer a superconducting layer having REBa 2 Cu 3 O 7 , where RE is a rare earth element.  
     
     
         58 . The method according to  claim 47  further comprising the step of depositing on the epitaxial layer a superconducting layer comprising YBa 2 Cu 3 O 7 .  
     
     
         59 . The method according to  claim 47  further comprising the step of depositing the epitaxial layer using pulsed-laser deposition.  
     
     
         60 . A method for preparing an epitaxial article, comprising the steps of: 
 providing a substrate with a metal surface;    depositing an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO 2 , HfO 2 , and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO 2  and HfO 2 , wherein said epitaxial buffer layer depositing step occurs in a vacuum with a background pressure of no more than 1×10 −5  Torr;    depositing an epitaxial capping layer on the epitaxial buffer layer, the epitaxial capping layer being of a different composition than the epitaxial buffer layer; and    depositing a superconducting layer on the epitaxial layer.    
     
     
         61 . The method according to  claim 60  further comprising the step of providing a crystalline metal surface.  
     
     
         62 . The method according to  claim 60  further comprising the step of providing a biaxially-textured metal surface.  
     
     
         63 . The method according to  claim 60  further comprising the step of rolling and annealing a metal material to form a biaxially-textured substrate having a surface.  
     
     
         64 . The method according to  claim 60  further comprising the step of rolling and annealing a metal substrate having one or more metals selected from the group consisting of Cu, Cu-based alloy, Ag, Co, Mo, Cd, Pd, Pt, Ni, and Ni-based alloy.  
     
     
         65 . The method according to  claim 60  further comprising the step of rolling and annealing a metal substrate having one or more metals selected from the group consisting of Ni and Ni-based alloy with at least one alloying agent selected from the group consisting of Co, Cr, V, Mo, W, and rare earth elements.  
     
     
         66 . The method according to  claim 60  further comprising the step of depositing on the metal surface an epitaxial buffer layer having at least one material selected from the group consisting of ZrO 2  and HfO 2  sub-units in the crystalline lattice of the epitaxial buffer layer.  
     
     
         67 . The method according to  claim 60  further comprising the step of depositing on the metal surface an epitaxial layer having at least one material with the structure ABO 3 , wherein A is selected from the group consisting of Ba, Ca, and Sr, and B is selected form the group consisting of Zr and Hf.  
     
     
         68 . The method according to  claim 60  further comprising the step of depositing on the metal surface an epitaxial buffer layer having YSZ.  
     
     
         69 . The method according to  claim 60  further comprising the step of depositing on the epitaxial buffer layer an epitaxial capping layer having a rare earth oxide.  
     
     
         70 . The method according to  claim 60  further comprising the step of depositing on the epitaxial buffer layer an epitaxial capping layer having at least one material selected from the group consisting of CeO 2  and Y 2 O 3 .  
     
     
         71 . The method according to  claim 60  further comprising the step of depositing on the epitaxial buffer layer an epitaxial capping layer which reduces the lattice mismatch between the superconducting layer and the epitaxial buffer layer.  
     
     
         72 . The method according to  claim 60  further comprising the step of depositing on the epitaxial capping layer a superconductor layer having an oxide superconductor.  
     
     
         73 . The method according to  claim 60  further comprising the step of depositing on the epitaxial capping layer a superconducting layer having REBa 2 Cu 3 O 7 , where RE is a rare earth element.  
     
     
         74 . The method according to  claim 60  further comprising the step of depositing on the epitaxial capping layer a superconducting layer having YBa 2 Cu 3 O 7 .  
     
     
         75 . The method according to  claim 60  further comprising the step of depositing the epitaxial buffer layer using pulsed-laser deposition.