Magnetic device

Abstract

A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first magnetic layer of a soft magnetic material formed on a flat substrate, first and second tunnel barrier layers formed on the first magnetic layer, magnetic particles of a ferromagnetic material provided between the first and second tunnel barrier layers, and a second magnetic layer of a soft magnetic material formed on the second tunnel barrier layer so as to create tunneling junctions.

What is claimed:  
     
         1 . A magnetic sensor using a tunneling magneto-resistive element comprising: 
 a first magnetic layer of a soft magnetic material,    a matrix layer formed on the first magnetic layer;    a second magnetic layer of a soft magnetic material formed on the matrix layer;    said matrix layer comprises a dielectric material and ferromagnetic particles, and    said ferromagnetic particles are dispersed in said matrix layer.    
     
     
         2 . A magnetic sensor according to  claim 1 , further comprising: 
 a first lead bonded to the first magnetic layer;    a second lead bonded to the second magnetic layer.    
     
     
         3 . A magnetic sensor according to claim  1 : 
 said ferromagnetic particles are cobalt particles.    
     
     
         4 . A magnetic sensor according to  claim 1 , said dielectric material is an aluminum oxide.  
     
     
         5 . A magnetic sensor using a tunneling magneto-resistive element comprising: 
 a first magnetic layer of a ferromagnetic material,    a matrix layer formed on the first magnetic layer;    a second magnetic layer of a ferromagnetic material formed on the matrix layer;    said matrix layer comprises a dielectric material and soft magnetic particles,    said soft magnetic particles are dispersed in said matrix layer.    
     
     
         6 . A magnetic sensor according to  claim 1 , further comprising: 
 a first lead bonded to the first magnetic layer,    a second lead bonded to the second magnetic layer.