Delay circuit having low operating environment dependency

Abstract

In the delay circuit of an inverter chain, the change in the output node of an inverter circuit is suppressed until the voltage of the output node or the output signal of another inverter circuit located downstream by an odd number of stages is inverted in logic. Thus, the delay circuit having a constant delay time regardless of the operating environment such as the power-supply voltage and the operating temperature can be implemented.

What is claimed is:  
     
         1 . A delay circuit, comprising: 
 a drive circuit for driving an output node according to a first input signal, an output signal at said output node from said drive circuit changing between a first voltage level and a second voltage level;    a capacitance element;    a delay control circuit coupled between said output node and said capacitance element for isolating said capacitance element from said output node when the signal on said output node is between said first voltage level and a prescribed voltage level that is between said first voltage level and a second voltage level, and for coupling said capacitance element to said output node when the signal on said output node is between said prescribed voltage level and said second voltage level; and    an auxiliary drive circuit for driving said output node according to a second input signal when activated, said auxiliary drive circuit being activated in response to the signal on said output node to drive said output node in a direction opposite to a driving direction of said drive circuit, and said auxiliary drive circuit being inactivated when the signal on said output node is between said first voltage level and said prescribed voltage level.    
     
     
         2 . The delay circuit according to  claim 1 , wherein 
 said auxiliary drive circuit includes:    first and second insulated gate type field effect transistors of a first conductivity type connected in series between said output node and a first power-supply node;    third and second insulated gate type field effect transistors of a second conductivity type connected in series between said output node and a second power-supply node;    a first inverter having a first input logic threshold for inverting the signal at said output node and applying the inverted signal to a gate of said first insulated gate type field effect transistor; and    a second inverter having a second input logic threshold different from said first input logic threshold for inverting the signal at said output node and applying the inverted signal to a gate of said third insulated gate type field effect transistor, said second input signal being applied to gates of the second and fourth insulated gate type field effect transistors.    
     
     
         3 . The delay circuit according to  claim 1 , wherein said second signal is common and leading in phase to the first signal.  
     
     
         4 . The delay circuit according to  claim 1 , wherein said second signal is reverse and leading in phase to the first signal.  
     
     
         5 . A semiconductor circuit device, comprising: 
 a reference voltage generating circuit for generating a reference voltage at an output node, said reference voltage generating circuit including a first resistance element connected between a first power-supply node and said output node, a second resistance element connected between said output node and an internal node, a first variable conductance element connected between said internal node and a second power supply node and changing in conductance according to a voltage of said output node, and a second variable conductance element coupled between said output node and said second power supply node and changing in conductance according to a voltage of said internal node; and    a gate circuit including a power supply transistor for supplying an operating current according to said reference voltage, for generating an output signal according to a received input signal.    
     
     
         6 . The semiconductor circuit device according to  claim 5 , wherein said gate circuit is a delay circuit for delaying the input signal to generate said output signal.  
     
     
         7 . The semiconductor circuit device according to  claim 5 , wherein said first and second variable conductance elements are insulated gate type field effect transistors of different conductivity types.  
     
     
         8 . A delay circuit, comprising: 
 a plurality of cascaded inverter circuits; and    a plurality of auxiliary circuits, provided corresponding to the output nodes of said plurality of cascaded inverter circuits, each for driving the output node of a corresponding inverter circuit in response to the output signal of an inverter circuit located downstream by an odd number of stages from said corresponding inverter circuit.    
     
     
         9 . The delay circuit according to  claim 8 , wherein each of said plurality of auxiliary circuits comprises an inverter circuit.  
     
     
         10 . A delay circuit, comprising: 
 a first inverter;    a second inverter for inverting an output signal from said first inverter; and    a variable current source for supplying, to an output node of said first inverter, a current in a direction preventing change of the output signal from said first inverter in response to an output signal from said second inverter, said variable current source including a plurality of current supplying elements connected in parallel with one another, said plurality of current supplying elements being rendered conductive selectively by a multibit control signal of a pseudo-gray code notation, in said pseudo-gray code notation, in any two successive numeric values of multibits, logical values of a same digit of at least one bit being held at “1.”