Semiconductor component on an insulation layer

Abstract

A semiconductor component is described which is realized on an insulation layer and has a first zone of a first conductivity type, a second zone of the first conduction type, and a third zone of a second conductivity type. The third zone is formed between the first zone and the second zone. A heavily doped zone of the second conductivity type is formed adjacent to the first zone and forms a tunnel diode with the first zone.

I claim:  
     
         1 . A semiconductor component, comprising: 
 a substrate;    an insulation layer disposed on said substrate;    a semiconductor layer disposed on said insulation layer;    a first zone of a first conductivity type formed in said semiconductor layer;    a second zone of said first conductivity type formed in said semiconductor layer;    a third zone of a second conductivity type formed in said semiconductor layer between said first zone and said second zone;    a control electrode disposed in a manner insulated from said semiconductor layer, said control electrode, when a drive potential is applied, brings about a conductive channel in said third zone between said first and second zones; and    a fourth zone of said second conductivity type disposed adjacent to said first zone and forms a tunnel diode with said first zone.    
     
     
         2 . The semiconductor component according to  claim 1 , wherein said first zone has a doping concentration substantially corresponding to a doping concentration of said fourth zone.  
     
     
         3 . The semiconductor component according to  claim 1 , wherein said first zone and said fourth zone each have a doping concentration greater than 1020 cm −3 .  
     
     
         4 . The semiconductor component according to  claim 1 , wherein said first zone and said fourth zone each have a doping concentration between 2·10 cm −1  and 8·10 20  cm −3 .  
     
     
         5 . The semiconductor component according to  claim 1 , wherein said second zone has a doping concentration substantially corresponding to a doping concentration of said first zone.