Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components

Abstract

A reverse-blocking power semiconductor component includes a drift path subdivided into a source-side area and a drain-side area by a region with opposite doping. Provided above this region is a gate. Alternatively, the body zone of the one conduction type is subdivided into a source-side part and a drain-side part by a region of the other conduction type. This region acts as an electron collector. The reverse-blocking power semiconductor component can be incorporated in compensation components, and power transistors. Methods for producing power semiconductor components are also provided.

I claim:  
     
         1 . A reverse-blocking power semiconductor component, comprising: 
 two electrodes defining an area therebetween;    a semiconductor layer disposed in the area between said two electrodes, defining a drift path of a first conduction type therein; and    a region disposed in said drift path and subdividing said drift path into two areas, said region being of the other conduction type, opposite to the one conduction type, said region having a gate.    
     
     
         2 . The power semiconductor component according to  claim 1 , including a further gate, said further gate being configured coherently with said gate of said region.  
     
     
         3 . The power semiconductor component according to  claim 1 , wherein said drift path of said semiconductor layer has a drain-side area, said drain-side area having a dopant concentration between 2·10 16  charge carriers/cm 3  and 1·10 14  charge carriers/cm 3 .  
     
     
         4 . The power semiconductor component according to  claim 1 , wherein said drift path has a drain-side area, said drain-side area having a layer thickness of about 2 μm to 100 μm.  
     
     
         5 . The power semiconductor component according to  claim 1 , wherein said drift path has a source-side area and a drain-side area, said source-side area having at least the same level of doping as said drain-side area.  
     
     
         6 . The power semiconductor component according to  claim 1 , wherein said drift path has a breakdown charge not being exceeded.  
     
     
         7 . The power semiconductor component according to  claim 6 , where said breakdown charge is 1·10 12  charge carriers/cm 2  in silicon.  
     
     
         8 . The power semiconductor component according to  claim 1 , wherein said drift path has a source-side area; and 
 a parasitic MOS transistor has a turn-on voltage and a channel formed by said source-side drift path.    
     
     
         9 . The power semiconductor component according to  claim 8 , wherein said source-side area has a part adjoining said gate of said region, and said part has an increased dopant concentration compared to a remainder of said region.  
     
     
         10 . The power semiconductor component according to  claim 8 , including an insulating layer having a given thickness and sheathing the gate electrode, said thickness being increased in said source-side area of said drift path.  
     
     
         11 . The power semiconductor component according to  claim 8 , wherein said gate is not present in said source-side area of said drift path.  
     
     
         12 . A trench power semiconductor component, comprising: 
 two electrodes defining an area therebetween;    a semiconductor layer disposed in the area between said two electrodes, defining a drift path of a first conduction type therein; and    a region disposed in said drift path and subdividing said drift path into two areas, said region being of the other conduction type, opposite to the one conduction type, said region having a gate.    
     
     
         13 . The trench power semiconductor component according to  claim 12 , wherein: 
 said drift path has a trench formed therein; and    said gate is disposed in said trench.    
     
     
         14 . An SOI power semiconductor component, comprising: 
 two electrodes defining an area therebetween;    a semiconductor layer disposed in the area between said two electrodes, defining a drift path of a first conduction type therein; and    a region disposed in said drift path and subdividing said drift path into two areas, said region being of the other conduction type, opposite to the one conduction type, said region having a gate.    
     
     
         15 . The power semiconductor component according to  claim 1 , including a buried insulating layer in said drift path.  
     
     
         16 . The power semiconductor component according to  claim 1 , wherein said region subdividing said drift path is p-doped.  
     
     
         17 . The power semiconductor component according to  claim 16 , wherein said region is doped with boron.  
     
     
         18 . A compensation component, comprising: 
 two electrodes defining an area therebetween;    a semiconductor layer disposed in the area between said two electrodes, defining a drift path of a first conduction type therein; and    a region disposed in said drift path and subdividing said drift path into two areas, said region being of the other conduction type, opposite to the one conduction type, said region having a gate.    
     
     
         19 . The compensation component according to  claim 18 , including: 
 a body zone in said semiconductor layer; and    a compensation region connected to said body zone.    
     
     
         20 . The power semiconductor component according to  claim 18 , wherein said compensation region is floating.  
     
     
         21 . The power semiconductor component as claimed in  claim 19 , wherein said compensation region is a compensation pillar.  
     
     
         22 . The power semiconductor component according to  claim 1 , wherein said gate of said region subdividing the drift path is formed from polycrystalline silicon.  
     
     
         23 . A method for producing a power semiconductor component, which comprises: 
 providing two electrodes defining an area therebetween;    providing a semiconductor layer in the area between the two electrodes;    defining a drift path of a first conduction type in the semiconductor layer;    providing a region in the drift path;    subdividing the drift path into two areas, the region being of the other conduction type, opposite to the one conduction type;    providing the region with a gate;    implanting the region dividing the drift path; and    allowing outward diffusion of dopants of the other conduction type from the region.    
     
     
         24 . The method according to  claim 23 , which further comprises, producing one of the areas as a source-side area of the drift path by a step selected from the group consisting of implanting the source-side area in the drift path and outward diffusion epitaxy.  
     
     
         25 . A method for producing a power semiconductor component, which comprises: 
 providing two electrodes defining an area therebetween;    providing a semiconductor layer in the area between the two electrodes;    defining a drift path of a first conduction type in the semiconductor layer;    providing a region in the drift path;    subdividing the drift path into two areas, the region being of the other conduction type, opposite to the one conduction type;    providing the region with a gate; and    producing the region subdividing the drift path by epitaxy.    
     
     
         26 . The method according to  claim 23 , which further comprises, producing one of the areas as a source-side area of the drift path by a step selected from the group consisting of implanting the source-side area in the drift path and outward diffusion epitaxy.  
     
     
         27 . A reverse-blocking power semiconductor component, comprising: 
 a semiconductor body forming a drift path of one conduction type;    a body zone of the other conduction type, opposite to the one conduction type, provided in said semiconductor body;    a source metalization;    a source zone of the one conduction type placed in said body zone and connected to said source metalization; and    a region of the one conduction type being inlaid in said body zone to define a source-side part and a drain-side part in said body zone, said region inlaid in said body zone being short-circuited at least to said drain-side part of said body zone;    said source metalization being connected electrically only to said source zone.    
     
     
         28 . The power semiconductor component according to  claim 25 , wherein said region inlaid in said body zone is also short-circuited to said source-side part of said body zone.  
     
     
         29 . The power semiconductor component according to  claim 27 , wherein said inlaid region is short-circuited with a purely resistive connection.  
     
     
         30 . The power semiconductor component according to  claim 27 , wherein said inlaid region is short-circuited with a non-rectifying connection.  
     
     
         31 . The power semiconductor component according to  claim 27 , wherein said inlaid region is short-circuited with a metal contact.  
     
     
         32 . The power semiconductor component according to  claim 27 , wherein said inlaid region acts as an electron collector.  
     
     
         33 . The power semiconductor component according to  claim 27 , wherein said semiconductor body forming the drift path has a doping between 2·10 16  charge carriers/cm 3  and 1·10 14  charge carriers/cm 3 .  
     
     
         34 . The power semiconductor component according to  claim 25 , wherein said semiconductor body forming the drift path has a thickness between 2 μm to 100 μm.  
     
     
         35 . The power semiconductor component according to  claim 31 , wherein said metal contact is disposed in said semiconductor body.  
     
     
         36 . The power semiconductor component according to  claim 31 , wherein said metal contact is disposed on a surface of said semiconductor body.  
     
     
         37 . The power semiconductor component according to  claim 28 , including a compensation structure.  
     
     
         38 . The power semiconductor component according to  claim 37 , wherein said compensation structure includes a compensation region inlaid in said drift path.  
     
     
         39 . The power semiconductor component according to  claim 38 , including a floating compensation pillar.  
     
     
         40 . The power semiconductor component according to  claim 38 , including a compensation pillar connected to said body zone.  
     
     
         41 . The power semiconductor component according to  claim 37 , wherein said compensation structure includes a pillar-like compensation region.  
     
     
         42 . The power semiconductor component according to  claim 27 , wherein said semiconductor body has a trench formed therein; and 
 a gate is disposed in said trench.    
     
     
         43 . The power semiconductor component according to  claim 27 , including a carrier wafer; and 
 said a semiconductor body, said body zone, said source metalization, said source zone, and said region are formed on said carrier wafer by SOI technology.    
     
     
         44 . The power semiconductor component according to  claim 27 , including an insulating layer buried in said semiconductor body.  
     
     
         45 . A power semiconductor component, comprising: 
 a first chip and a second chip serially connected to each other, each including a respective semiconductor body forming a drift path of one conduction type, a body zone of the other conduction type, opposite to the one conduction type, provided in said semiconductor body, a source metalization, and a source zone of the one conduction type placed in said body zone and connected to said source metalization, a region of the one conduction type inlaid in said body zone to define a source-side part and a drain-side part in said body zone, said region inlaid in said body zone being short-circuited at least to said drain-side part of said body zone, and said source metalization being connected electrically only to said source zone.    
     
     
         46 . The power semiconductor component as claimed in  claim 45 , wherein said first chip and said second chip are built up jointly.  
     
     
         47 . The power semiconductor component as claimed in  claim 45 , wherein said first chip and said second chip are mounted chip-on-chip.  
     
     
         48 . The power semiconductor component according to  claim 45 , wherein each of said first chip and said second chip has a respective MOSFET.  
     
     
         49 . The power semiconductor component according to  claim 48 , wherein: 
 each of said MOSFETs has a respective gate; and    said gates of said MOSFETs are connected.    
     
     
         50 . The power semiconductor component according to  claim 48 , wherein: 
 each of said MOSFETs has a source; and    said sources of said MOSFETs are connected to each other.    
     
     
         51 . The power semiconductor component according to  claim 27 , wherein the one conduction type is the n-conduction type.  
     
     
         52 . A power transistor, comprising: 
 a semiconductor body forming a drift path of one conduction type;    a body zone of the other conduction type, opposite to the one conduction type, provided in said semiconductor body;    a source metalization;    a source zone of the one conduction type placed in said body zone and connected to said source metalization; and    a region of the one conduction type inlaid in said body zone to define a source-side part and a drain-side part in said body zone, said region inlaid in said body zone being short-circuited at least to said drain-side part of said body zone;    said source metalization being connected electrically only to said source zone.    
     
     
         53 . A method of producing a power semiconductor component, which comprises: 
 including a semiconductor body forming a drift path of one conduction type;    providing a body zone of the other conduction type, opposite to the one conduction type in the semiconductor body;    providing a source metalization;    providing a source zone of the one conduction type placed in the body zone and connecting the source zone to the source metalization;    inlaying a region of the one conduction type in the body zone to define a source-side part and a drain-side part in the body zone;    short-circuiting the region inlaid in the body zone at least to the drain-side part of the body zone;    connecting the source metalization electrically only to the source zone; and    producing the region subdividing the body zone is produced by implantation and outward diffusion.    
     
     
         54 . A method of producing a power semiconductor component, which comprises: 
 including a semiconductor body forming a drift path of one conduction type;    providing a body zone of the other conduction type, opposite to the one conduction type in the semiconductor body;    providing a source metalization;    providing a source zone of the one conduction type placed in the body zone and connecting the source zone to the source metalization;    inlaying a region of the one conduction type in the body zone to define a source-side part and a drain-side part in the body zone;    short-circuiting the region inlaid in the body zone at least to the drain-side part of the body zone;    connecting the source metalization electrically only to the source zone; and    producing the region that subdivides the body zone by epitaxy.    
     
     
         55 . The method as claimed in  claim 53 , which further comprises: 
 producing initially a body zone by epitaxy;    subdividing the body zone into two parts by introducing subsequently the additional region by high-energy implantation.    
     
     
         56 . The method as claimed in  claim 53 , which further comprises: 
 producing initially a body zone by implantation and diffusion;    subdividing the body zone into two parts by introducing subsequently the additional region by high-energy implantation.    
     
     
         57 . The method according to  claim 53 , which further comprises implanting the additional region before the outward diffusion of the body zone.