Method for manufacturing semiconductor device capable of expelling argon gas

Abstract

In a method for manufacturing a semiconductor device, a first conductive layer is formed on a semiconductor substrate. Then, a plasma etching process using Ar ions is performed upon the first conductive layer to remove natural oxide from the first conductive layer. Then, a heating process at a temperature higher than about 650° C. is performed upon the first conductive layer to expel Ar atoms from the first conductive layer. Finally, a second conductive layer is formed by a sputtering process on the first conductive layer.

1 . An apparatus for manufacturing a semiconductor device comprising: 
 a plasma etching chamber for performing a plasma etching process using Ar ions upon said semiconductor device;    a heating chamber for heating said semiconductor device at a temperature higher than about 650° C. to expel Ar atoms from said semiconductor device;    a sputtering chamber for forming a conductive layer of said semiconductor device;    a separation chamber, coupled to said plasma etching chamber, said heating chamber and said sputtering chamber, said separation chamber being provided with members for moving said semiconductor device from one of said plasma etching chamber, said heating chamber and said sputtering chamber to another,    said plasma etching chamber, said heating chamber, said sputtering chamber and said separation chamber being in one vacuum atmosphere.    
     
     
         2 . The apparatus as set forth in  claim 1 , wherein said heating chamber is provided with a Ramp annealer.  
     
     
         3 . The apparatus as set forth in  claim 1 , wherein said plasma etching process is a radio-frequency plasma etching process.