US2002176939A1PendingUtilityA1

Method of improving the adhesion of copper

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Assignee: APPLIED MATERIALS INCPriority: Aug 23, 2000Filed: May 2, 2002Published: Nov 28, 2002
Est. expiryAug 23, 2020(expired)· nominal 20-yr term from priority
Inventors:Tushar Mandrekar
H10P 14/43H10W 20/0425H10W 20/425H10W 20/045H10W 20/033H10W 20/043
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Claims

Abstract

The present invention provides a method of improving the adhesion of a copper layer to a barrier layer on a substrate. After deposition of a barrier layer, such as TiN, an amorphous silicon layer is deposited by striking a plasma over the substrate using a silicon source gas, such as silane, and an inert gas, such as argon (Ar). A Cu layer is deposited on the amorphous silicon. In another aspect of the invention, a TiSiN layer is deposited using a silicon source gas, such as silane, and a titanium source gas, such as TDMAT, during the deposition of the TiN barrier layer.

Claims

exact text as granted — not AI-modified
1 . A method for depositing copper on a substrate, comprising: 
 positioning a substrate in a processing chamber;    depositing a barrier layer from a first processing gas mixture containing a source of titanium, nitrogen, and silicon onto the substrate for a first predetermined time in the processing chamber; and    depositing a layer of copper onto the barrier layer from a second processing gas mixture containing a copper source for a second predetermined time.    
     
     
         2 . The method of  claim 1 , wherein the barrier layer is a layer of TiSiN.  
     
     
         3 . The method of  claim 1 , wherein the source of titanium and nitrogen is tetrakis-dimethylamido-titanium (Ti(N(CH 4 ) 2 ) 4 ), and the source of silicon is silane.  
     
     
         4 . The method of  claim 3 , wherein the barrier layer is deposited at a temperature in the range of about 400° C. to about 500° C.  
     
     
         5 . The method of  claim 3 , wherein the barrier layer is deposited at a temperature in the range of about 350° C. to about 550° C.  
     
     
         6 . The method of  claim 3 , wherein the barrier layer is deposited at a pressure in the range of about 1.0 Torr to about 2.0 Torr.  
     
     
         7 . The method of  claim 3 , wherein the barrier layer is deposited at a pressure in the range of about 1.0 Torr to about 5.0 Torr.  
     
     
         8 . The method of  claim 3 , wherein the first predetermined time is in the range of about 10 seconds to about 20 seconds.  
     
     
         9 . The method of  claim 3 , wherein the first predetermined time is in the range of about 5 seconds to about 25 seconds.  
     
     
         10 . The method of  claim 3 , wherein the first processing gas mixture comprises tetrakis-dimethylamido-titanium (Ti(N(CH 4 ) 2 ) 4 )/He and silane in a ratio range of about 4:1 to about 5:1.  
     
     
         11 . The method of  claim 3 , wherein the tetrakis-dimethylamido-titanium (Ti(N(CH 4 ) 2 ) 4 ) is introduced into the processing chamber with helium at a rate of about 125 sccm to about 325 sccm, and the silane is introduced into the processing chamber at a rate of about 25 sccm to about 75 sccm.  
     
     
         12 . The method of  claim 3 , wherein the copper layer is deposited by CVD.  
     
     
         13 . The method of  claim 3 , further comprising depositing a second layer of copper by electroplating.  
     
     
         14 . A method for depositing copper on a substrate, comprising: 
 depositing a TiSiN layer on a substrate in a processing chamber for a first period of time from a first processing gas mixture containing a source of titanium, nitrogen, and silicon; and    depositing a copper layer onto the TiSiN layer for a second period of time from a second processing gas mixture.    
     
     
         15 . The method of  claim 14 , wherein the titanium and nitrogen source is tetrakis-dimethylamido-titanium (Ti(N(CH 4 ) 2 ) 4 ), and the silicon source is silane.  
     
     
         16 . The method of  claim 15 , wherein the TiSiN layer is deposited at a temperature in the range of about 400° C. to about 500° C.  
     
     
         17 . The method of  claim 15 , wherein the TiSiN layer is deposited at a temperature in the range of about 350° C. to about 550° C.  
     
     
         18 . The method of  claim 15 , wherein the TiSiN layer is deposited at a pressure in the range of about 1.0 Torr to about 2.0 Torr.  
     
     
         19 . The method of  claim 15 , wherein the TiSiN layer is deposited at a pressure in the range of about 1.0 Torr to about 5.0 Torr.  
     
     
         20 . The method of  claim 15 , wherein the first period of time is in the range of about 10 seconds to about 20 seconds.  
     
     
         21 . The method of  claim 15 , wherein the first period of time is in the range of about 5 seconds to about 25 seconds.  
     
     
         22 . The method of  claim 15 , wherein the first processing gas mixture comprises tetrakis-dimethylamido-titanium (Ti(N(CH 4 ) 2 ) 4 )/He and silane in a ratio range of about 4:1 to about 5:1.  
     
     
         23 . The method of  claim 15 , wherein the tetrakis-dimethylamido-titanium (Ti(N(CH 4 ) 2 ) 4 ) is introduced into the processing chamber with helium at a rate of about 125 sccm to about 325 sccm, and the silane is introduced into the processing chamber at a rate of about 25 sccm to about 75 sccm.  
     
     
         24 . The method of  claim 15 , wherein the copper layer is deposited by CVD.  
     
     
         25 . The method of  claim 15 , further comprising depositing a second layer of copper by electroplating.

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