Mounting structure of semiconductor chip, semiconductor device and method of making the semiconductor device
Abstract
The present invention provides a mounting structure of a semiconductor chip ( 3 ) onto an insulated substrate ( 2 ). The insulated substrate ( 2 ) is made of a polyimide resin, at least side surfaces ( 3 c ) of the semiconductor chip ( 3 ) is protected by a protective resin ( 5 ) provided by a polyimide resin. The semiconductor chip ( 3 ) is held by the protective resin ( 5 ) with respect to the insulated substrate ( 2 ). Preferably, an adhesive layer ( 4 ) is provided between the semiconductor chip ( 3 ) and the insulated substrate ( 2 ). The adhesive layer ( 4 ) is also provided by a polyimide resin.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A mounting structure of a semiconductor chip onto an insulated substrate,
the insulated substrate being made of a polyimide resin, at least a side surface of the semiconductor chip being protected by a protective resin provided by a polyimide resin, the semiconductor chip being held by the protective resin with respect to the insulated substrate.
2 . The mounting structure according to claim 1 , wherein the protective resin rides on an upper surface of the semiconductor chip.
3 . The mounting structure according to claim 1 , wherein the protective resin seals the semiconductor chip entirely.
4 . The mounting structure according to claim 1 , wherein an adhesive layer is provided between the semiconductor chip and the insulated substrate.
5 . The mounting structure according to claim 4 , wherein the adhesive layer is provided by a polyimide resin.
6 . The mounting structure according to claim 1 , wherein the insulated substrate has a peripheral margin extending beyond the semiconductor chip, the protective resin being formed to rise from the margin.
7 . The mounting structure according to claim 1 , wherein the semiconductor chip has an electrode bearing surface formed with a plurality of electrodes, the insulated substrate being provided with external terminals disposed in a grid pattern, each made of a solder ball and electrically connected with a corresponding one of the electrodes.
8 . The mounting structure according to claim 1 , wherein the electrode bearing surface is faced to the insulated substrate.
9 . The mounting structure according to claim 1 , wherein the electrode bearing surface is faced away from the insulated substrate, the electrical connection of each electrode of the semiconductor chip with the corresponding external terminal being provided by a wire.
10 . A semiconductor device comprising:
an insulated substrate; and a semiconductor chip mounted on the insulated substrate; wherein the insulated substrate is made of a polyimide resin, and wherein at least a side surface of the semiconductor chip is protected by a protective resin provided by a polyimide resin, the semiconductor chip being held by the protective resin with respect to the insulated substrate.
11 . The semiconductor device according to claim 10 , wherein the protective resin rides on an upper surface of the semiconductor chip.
12 . The semiconductor device according to claim 10 , wherein the protective resin seals the semiconductor chip entirely.
13 . The semiconductor device according to claim 10 , wherein the semiconductor chip and the insulated substrate sandwich an adhesive layer in between.
14 . The semiconductor device according to claim 10 , wherein the adhesive layer is provided by a polyimide resin.
15 . The semiconductor device according to claim 10 , wherein the insulated substrate has a peripheral margin extending beyond the semiconductor chip, the protective resin being formed to rise from the margin.
16 . The semiconductor device according to claim 10 , wherein the semiconductor chip has an electrode bearing surface formed with a plurality of electrodes, the insulated substrate being provided with external terminals disposed in a grid pattern, each made of a solder ball and electrically connected with a corresponding one of the electrodes.
17 . The semiconductor device according to claim 10 , wherein the electrode bearing surface is faced to the insulated substrate.
18 . The semiconductor device according to claim 10 , wherein the electrode bearing surface is faced away from the insulated substrate, the electrical connection of each electrode of the semiconductor chip with the corresponding external terminal being provided by a wire.
19 . A method of manufacturing a semiconductor device, comprising steps of:
mounting a semiconductor chip on an insulated substrate; and covering at least a side surface of the semiconductor chip with a protective resin, thereby holding the semiconductor chip with respect to the insulated substrate; characterized that the protective resin is formed by thermal imidization of a liquid polyamide precursor.
20 . The method according to claim 19 , further comprising steps of:
forming a non-hardened or semi-hardened adhesive layer on the insulated substrate; and pressing the semiconductor chip onto the insulated substrate under heat via the adhesive layer.
21 . The method according to claim 21 , wherein
ultrasonic wave is applied to the semiconductor chip when pressing the semiconductor chip onto the insulated substrate under heat via the adhesive layer.Join the waitlist — get patent alerts
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