Thin film transistor substrate and fabricating method thereof

Abstract

A thin film transistor substrate having a structure in which a thin film transistor array is formed on color filters. In the substrate, a thin film transistor is formed on the color filters. A smoothing layer compensates for step coverage between the color filters and is provided with a recess in which a gate electrode of the thin film transistor is to be formed. Accordingly, step coverage in the gate electrode is eliminated, so that it becomes possible to manufacture a large-dimension panel without a limitation to the thickness and profile of the gate electrode.

What is claimed is:  
     
         1 . A thin film transistor substrate including color filters, comprising: 
 a thin film transistor formed on the color filters; and    a smoothing layer compensating for a step coverage between the color filters and being provided with a recess in which a gate electrode of the thin film transistor is to be formed.    
     
     
         2 . The thin film transistor substrate according to  claim 1 , wherein the recess of the smoothing layer has the same bulk as the gate electrode.  
     
     
         3 . A method of fabricating a thin film transistor substrate having a thin film transistor formed on color filters, comprising the steps of: 
 forming the color filters on a transparent substrate;    forming a smoothing layer on the color filters and then pattering it to thereby define a recess in which a gate electrode of the thin film transistor is to be formed; and    forming the thin film transistor on the smoothing layer.    
     
     
         4 . The method according to  claim 3 , wherein the recess of the smoothing layer has the same bulk as the gate electrode.  
     
     
         5 . The method according to  claim 3 , wherein said step of forming the thin film transistor includes: 
 forming the gate electrode in the recess of the smoothing layer; and    sequentially forming a gate insulating film, a semiconductor layer and source and drain electrodes on the gate electrode and the smoothing layer.