Release surfaces, particularly for use in nanoimprint lithography
Abstract
The addition of thin coatings (less than and approaching monomolecular coatings) of persistent release materials comprising preferred compounds of the formula: RELEASE-M(X) n -1 RELEASE-M(X) n-m-1 Q m , or RELEASE-M(OR) n -1 -, wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal atom, semiconductor atom, or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; Q is hydrogen or alkyl group; m is the number of Q groups; R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and; n is the valence −1 of M, and n-m-1 is at least 1 provides good release properties. The coated substrates are particularly good for a lithographic method and apparatus for creating ultra-fine (sub-25 nm) patterns in a thin film coated on a substrate is provided, in which a mold having at least one protruding feature is pressed into a thin film carried on a substrate. The protruding feature in the mold creates a recess of the thin film. The mold is removed from the film. The thin film then is processed such that the thin film in the recess is removed exposing the underlying substrate. Thus, the patterns in the mold is replaced in the thin film, completing the lithography. The patterns in the thin film will be, in subsequent processes, reproduced in the substrate or in another material which is added onto the substrate.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A lithographic method for forming a pattern in a film carried on a substrate, comprising the steps of:
depositing a film on a substrate to provide a mold having a protruding feature and a recess formed thereby, the feature and the recess having a shape forming a mold pattern; urging the mold into the film whereby the thickness of the film under the protruding feature is reduced and a thin region is formed in the film; removing the mold from the film; processing the relief whereby the thin region is removed exposing a portion of the surface of the substrate which underlies the thin region; and whereby the exposed portion of the surface of the substrate substantially replicates the mold pattern, the improvement comprising at least a portion of said protruding feature and a portion of said release have bonded thereto a release material comprising an inorganic linking group bonded to a molecular chain having release properties.
2 . The method of claim 1 wherein said release material comprises a material having the formula:
RELEASE-M(X) n-1 - or RELEASE-M(OR) n-1 -, wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and; (n) is the valence −1 of M.
3 . The process of claim 2 wherein RELEASE comprises a highly fluorinated organic group.
4 . The process of claim 3 wherein said highly fluorinated group comprises a perfluorinated alkyl group.
5 . The process of claim 2 wherein M is Si.
6 . The process of claim 2 wherein X is halogen.
7 . The process of claim 2 wherein X is chloro or bromo.
8 . The process of claim 6 wherein M is Si.
9 . The process of claim 7 wherein M is Si.
10 . A process for improving the release properties of a surface comprising:
a) providing a surface; b) contacting that surface with a release forming material wherein said release forming material comprises a material having the formula: RELEASE-M(X) n-1 or RELEASE-M(OR) n-1 -, wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and; (n) is the valence −1 of M.
11 . The process of claim 10 wherein said release forming material comprises a material of the formula:
RELEASE-M(X) n-1 - wherein
RELEASE is a molecular chain of from 4 to 20 atoms in length, which molecular chain has either polar or non-polar properties;
M is a metal or semimetal atom;
X is halogen or cyano, especially Cl, F, or Br; and
(n) is the valence −1 of M.
12 . The process of claim 11 wherein RELEASE comprises a highly fluorinated organic group.
13 . The process of claim 12 wherein said highly fluorinated group comprises a perfluorinated organic group.
14 . The process of claim 11 wherein said highly fluorinated group comprises a perfluorinated alkyl group of from 4 to 16 carbon atoms.
15 . The process of claim 11 wherein M is Si.
16 . The process of claim 12 wherein M is Si.
17 . The process of claim 13 wherein M is Si.
18 . The process of claim 14 wherein M is Si.
19 . A surface having good antiadherent properties comprising a surface having bonded thereto the residue of material of the formula:
RELEASE-M(X) n-1 - or RELEASE-M(OR) n-1 -, wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and; (n) is the valence −1 of M, said material being bonded to said surface only through a bond directly to M where a group X or OR has been removed to enable bonding to said surface, with the group RELEASE still attached to M.
20 . The surface of claim 19 wherein said material comprises a material of the formula:
RELEASE-M(X) n-1 - wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; and (n) is the valence −1 of M.
21 . The surface of claim 20 wherein RELEASE comprises a highly fluorinated group.
22 . The surface of claim 21 wherein said highly fluorinated group comprises a perfluorinated group.
23 . The surface of claim 22 wherein said highly fluorinated group comprises a perfluorinated group of from 4 to 16 carbon atoms.
24 . The surface of claim 20 wherein M is Si.
25 . The surface of claim 21 wherein M is Si.
26 . The surface of claim 22 wherein M is Si.
27 . The surface of claim 23 wherein M is Si.
28 . A surface having good antiadherent properties comprising a surface having bonded thereto the material of the formula:
RELEASE-M(X) p-2 or RELEASE-M(OR) p-2 , wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and; p is the valence of M, said material being bonded to said surface only through a bond directly to M.
29 The surface of claim 19 wherein the surface comprises a patterned mold surface.
30 . The method of claim 1 including heating the thin film to a temperature to allow sufficient softening of the film relative to the mold prior to the step of urging.
31 . The method of claim 1 wherein the feature on the mold is formed from material selected from the group consisting of: semiconductors, dielectrics, metals, ceramics, polymers and their combination.
32 . The surface of claim 19 wherein said surface comprises a material selected from the group consisting of: semiconductors, dielectrics, metals, ceramics, polymers and their combination.
33 . The method of claim 1 wherein the step of processing comprises reactive ion etching.
34 . The method of claim 1 including repeating the steps of obtaining a mold, urging, removing, and processing to form a multilayered device.
35 . The method of claim 9 wherein the material is selected from the group consisting of semiconductors, dielectrics, metals, ceramics, polymers, and their combination.
36 . A lithographic method for forming a pattern in a film carried on a substrate, comprising the steps of:
obtaining a substrate having a release coating thereon formed by the reaction of a compound of the formula RELEASE-M(X) n-1 - or RELEASE-M(OR) n-1 -, wherein RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from 6 to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; R is hydrogen, alkyl or phenyl, preferably hydrogen or alkyl of 1 to 4 carbon atoms; and; (n) is the valence −1 of M, depositing a film on the substrate; obtaining a mold having a protruding feature and a recess formed thereby, the feature and the recess having a shape forming a mold pattern; urging the mold into the film creating a thickness contrast pattern in the film; removing the mold from the film; and transferring the thickness contrast pattern in the film onto the substrate.
37 . A process for improving the release properties of a surface comprising:
a) providing a surface; b) contacting that surface with a release forming material wherein said release forming material comprises a material having the formula: RELEASE-M(X) n-m-1 Q m , RELEASE is a molecular chain of from 4 to 20 atoms in length, preferably from to 16 atoms in length, which molecule has either polar or non-polar properties; M is a metal or semimetal atom; X is halogen or cyano, especially Cl, F, or Br; Q is a hydrogen or alkyl group, m is the number of Q groups, n-m-1 is at least 1, and n is the valence −1 of M.
38 . The process of claim 2 wherein said release material comprises a material having the formula:
RELEASE-M(X) n-1 -.
39 . The surface of claim 28 wherein said release material comprises a material having the formula:
RELEASE-M(X) n-1 -.
40 . The process of claim 38 wherein M is Si;
X is halogen Cl or Br;
RELEASE is perfluoroalkyl of 6 to 20 carbon atoms;
and
n is 3.
41 . The surface of claim 39 wherein M is Si;
X is halogen Cl or Br;
RELEASE is perfluoroalkyl of 6 to 20 carbon atoms
and
n is 3.Join the waitlist — get patent alerts
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