Method of manufacturing an object in a vacuum recipient

Abstract

A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object. A control signal is applied to the electroconductive surfaces during repeating and alternating first time spans and second time spans, for prevent arcing at the part of the electroconductive surfaces which is, or is becoming electrically isolated from the atmosphere by being covered by the electrical charge carriers.

We claim:  
     
         1 . A method of enhanced thin film processing in a plasma system comprising the steps of: 
 a. supplying a target material within a coating chamber;    b. furnishing direct current power to said coating chamber through a circuit having a first and second lead to create a plasma through which current flows;    c. causing deposition of a thin film of coating material upon a substrate through action of said plasma for a deposition period for thin film processing; and    d. timing to accomplish periodically clearing said system of an uneven buildup of charged particles in the first place so that such timing is set to eliminate the occurrence of arcs throughout said deposition period for thin film processing.    
     
     
         2 . A method of enhanced thin film processing in a plasma system as described in  claim 1 , wherein said periodically clearing is performed with a repetition rate of 50 kHz to 500 kHz.  
     
     
         3 . A method of enhanced thin film processing in a plasma system as described in  claim 2 , wherein said repetition rate is at least 90 kHz.  
     
     
         4 . A method of enhanced thin film processing in a plasma system as described in  claim 2 , wherein said repetition rate is at least 100 kHz.  
     
     
         5 . A method of enhanced thin film processing in a plasma system as described in  claim 2 , wherein said thin film processing is ion plating.  
     
     
         6 . A method of enhanced thin film processing in a plasma system as described in  claim 1 , wherein said periodically clearing is performed with a repetition rate of between 50 Hz and 1 MHz.  
     
     
         7 . A method of enhanced thin film processing in a plasma system as described in  claim 6 , wherein said repetition rate is between 5 kHz and 100 kHz.  
     
     
         8 . A method of enhanced thin film processing in a plasma system as described in  claim 6 , wherein said repetition rate is between 10 kHz and 20 kHz.  
     
     
         9 . A method of enhanced thin film processing in a plasma system as described in  claim 6 , wherein said thin film processing is sputtering.  
     
     
         10 . A method of enhanced thin film processing in a plasma system as described in  claim 1  wherein said step of timing to accomplish periodically clearing said system of an uneven buildup of charged particles periodically causes the step of immediately stopping current from flowing through said plasma.  
     
     
         11 . A method of enhanced thin film processing in a plasma system as described in  claim 1  wherein said step of furnishing direct current power to said coating chamber comprises the step of applying a voltage to said coating chamber and wherein said step of timing to accomplish periodically clearing said system of an uneven buildup of charged particles periodically causes the step of applying a reverse voltage to said coating chamber.  
     
     
         12 . A method of enhanced thin film processing in a plasma system as described in  claim 11  wherein said reverse voltage is substantial.  
     
     
         13 . An enhanced DC plasma processing system comprising: 
 a. a coating chamber having an anode and a cathode;    b. a material target disposed to expose coating material within said chamber;    c. a DC power source wherein said DC power source has a direct current power output and first and second leads which are connected across a plasma to establish a circuit through which current flows; and    d. a timer which causes periodic clearing of said system of an uneven buildup of charged particles in the first place, wherein the timer is set to eliminate the occurrence of arcs throughout a deposition period for thin film processing.    
     
     
         14 . An enhanced DC plasma processing system as described in  claim 13 , wherein said timer courses said periodic clearing at a repetition rate of 50 kHz to 500 kHz.  
     
     
         15 . An enhanced DC plasma processing system as described in  claim 14 , wherein said timer causes said periodic clearing at a repetition rate of at least 90 kHz.  
     
     
         16 . An enhanced DC plasma processing system as described in  claim 14 , wherein said timer causes said periodic clearing at a repetition rate of at least 100 kHz.  
     
     
         17 . An enhanced DC plasma processing system as described in  claim 14 , wherein said plasma processing system is an ion plating system.  
     
     
         18 . An enhanced DC plasma processing system as described in  claim 13 , wherein said timer causes said periodic clearing at a repetition rate of between 50 Hz and 1 MHz.  
     
     
         19 . An enhanced DC plasma processing system as described in  claim 18 , wherein said timer causes said periodic clearing at a repetition rate between 50 kHz and 100 kHz.  
     
     
         20 . An enhanced DC plasma processing system as described in  claim 18 , wherein said timer causes said periodic clearing at a repetition rate between 10 kHz and 20 kHz.  
     
     
         21 . An enhanced DC plasma processing system as described in  claim 18 , wherein said plasma processing system is a sputtering system.  
     
     
         22 . An enhanced DC plasma processing system as described in  claim 13  wherein said timer which causes periodic clearing of said system of an uneven buildup of charged particles causes current flowing through said plasma to immediately stop.  
     
     
         23 . An enhanced DC plasma processing system as described in  claim 13  wherein DC power source applies a voltage to said coating chamber and wherein said timer which causes periodic clearing of said system of an uneven buildup of charged particles comprises reversing circuitry which applies a reverse voltage to said coating chamber.  
     
     
         24 . An enhanced DC plasma processing system as described in  claim 23  wherein said reverse voltage is substantial.  
     
     
         25 . A method of enhanced thin film processing in a plasma system comprising the steps of: 
 a. supplying a target material within a coating chamber;    b. furnishing direct current power to said coating chamber through a circuit having a first and second lead to create a plasma through which current flows;    c. causing deposition of a thin film of coating material upon a substrate through action of said plasma for a deposition period for thin film processing; and    d. timing to accomplish periodically clearing said system of an uneven buildup of charged particles in the first place so that such timing is set to eliminate the occurrence of arcs throughout said deposition period for thin film processing, 
 wherein said step of periodically clearing comprises the step of applying a reverse voltage.  
   
     
     
         26 . An enhanced DC plasma processing system comprising: 
 a. a coating chamber having an anode and a cathode;    b. a material target disposed to expose coating material within said chamber;    c. a DC power source wherein said DC power source has a direct current power output and first and second leads which are connected across a plasma to establish a circuit through which current flows;    d. a timer which causes periodic clearing of said system of an uneven buildup of charged particles in the first place, wherein the timer is set to eliminate the occurrence of arcs throughout a deposition period for thin film processing; and    e. reversing circuitry which applies a reverse voltage to said coating chamber.