US2002146902A1PendingUtilityA1
Chemical vapor deposition apparatus
Est. expirySep 3, 2018(expired)· nominal 20-yr term from priority
Inventors:Brian A. Vaartstra
H10P 14/418
42
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A method of forming an iridium-containing film on a substrate, such as a semiconductor wafer using complexes of the formula L y IrX z , wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group and X is a halide; y=1 to 4; z=1 to 4; x=0 to 3.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of manufacturing a semiconductor structure, the method comprising:
providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes of the formula: L y IrY 2 , wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
forming an iridium-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
2 . The method of claim 1 wherein the step of forming an iridium-containing film comprises vaporizing the precursor composition and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.
3 . The method of claim 2 wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.
4 . The method of claim 1 wherein the semiconductor substrate is a silicon wafer or a gallium arsenide wafer.
5 . The method of claim 1 wherein each R group is a C 1 -C 8 organic group.
6 . The method of claim 5 wherein each R group is a C 1 -C 5 organic group.
7 . The method of claim 6 wherein each R group is a C 1 -C 4 alkyl moiety.
8 . The method of claim 1 wherein the precursor composition is a liquid.
9 . The method of claim 8 wherein the liquid precursor composition comprises a solid dissolved in a solvent.
10 . The method of claim 1 wherein the precursor composition is vaporized in the presence of a carrier gas.
11 . The method of claim 1 wherein the precursor composition is vaporized in the presence of a reaction gas.
12 . The method of claim 11 wherein the reaction gas is a nonhydrogen gas.
13 . The method of claim 1 wherein the iridium-containing film is a single transition metal or alloy film.
14 . A method of manufacturing a semiconductor structure, the method comprising:
providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more organic solvents and one or more complexes of the formula: L y IrY z , wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the semiconductor substrate or substrate assembly to form an iridium-containing film on a surface of the semiconductor substrate or substrate assembly.
15 . A method of forming a film on a substrate, the method comprising:
providing a substrate; providing a precursor composition comprising one or more complexes of the formula: L y IrY z , wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
forming an iridium-containing film from the precursor composition on a surface of the substrate.
16 . The method of claim 15 wherein the step of forming an iridium-containing film comprises vaporizing the precursor composition and directing it toward the substrate using a chemical vapor deposition technique.
17 . The method of claim 16 wherein the precursor composition is a liquid.
18 . A method of forming a film on a substrate, the method comprising:
providing a substrate; providing a precursor composition comprising one or more solvents and one or more complexes of the formula: L y IrY z , wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
vaporizing the precursor composition to form vaporized precursor composition; and directing the vaporized precursor composition toward the substrate to form an iridium-containing film on a surface of the substrate.
19 . A chemical vapor deposition apparatus comprising:
a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: L y IrY z , wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
20 . A chemical vapor deposition apparatus comprising:
a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more complexes of the formula: L y IrY z , wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
21 . A method of manufacturing a semiconductor structure, the method comprising:
providing a semiconductor substrate or substrate assembly; providing a precursor composition comprising one or more complexes of the formula: L y IrY z , wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x=0 to 3;
y=1 to 4; and
z=1 to 4; and
providing a precursor composition comprising one or more platinum complexes; and forming a platinum-iridium-containing film from the precursor composition on a surface of the semiconductor substrate or substrate assembly.
22 . The method of claim 20 wherein the step of forming a platinum-iridium-containing film comprises vaporizing the precursor compositions and directing them toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.
23 . The method of claim 20 wherein the precursor composition comprising one or more complexes of the formula L y IrY z is the same as the precursor composition comprising one or more platinum complexes.
24 . The method of claim 20 wherein the semiconductor substrate is a silicon wafer or a gallium arsenide wafer.
25 . The method of claim 20 wherein each R group is a C 1 -C 8 organic group.
25 . The method of claim 24 wherein each R group is a C 1 -C 5 organic group.
26 . The method of claim 25 wherein each R group is a C 1 -C 4 alkyl moiety.
27 . The method of claim 20 wherein the precursor compositions are each liquids.
28 . The method of claim 27 wherein the liquid precursor compositions comprise a solid dissolved in a solvent.
29 . The method of claim 20 wherein the precursor compositions are vaporized in the presence of a carrier gas.
30 . The method of claim 20 wherein the precursor compositions are vaporized in the presence of a reaction gas.
31 . The method of claim 20 wherein the platinum precursor composition comprises CpPt(Me) 3 , wherein Me is a methyl group and Cp is cyclopentadienyl.
32 . A method of forming a film on a substrate, the method comprising:
providing a substrate; providing a precursor composition comprising one or more complexes of the formula: L y IrY 2 , wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x, CNR, and RCN, wherein R is an organic group, X is a halide, and x= 0 to 3;
y=1 to 4; and
z=1 to 4; and
providing a precursor composition comprising one or more platinum complexes; and; forming a platinum-iridium-containing film from the precursor composition on a surface of the substrate.
33 . The method of claim 32 wherein forming a platinum-iridium-containing film comprises vaporizing the precursor compositions and directing them toward the substrate using a chemical vapor deposition technique.
34 . The method of claim 32 wherein the platinum precursor composition comprises CpPt(Me) 3 , wherein Me is a methyl group and Cp is cyclopentadienyl.
35 . The apparatus of claim 19 wherein the substrate is a semiconductor substrate.
36 . The apparatus of claim 35 wherein the semiconductor substrate is a silicon wafer or a gallium arsenide wafer.
37 . The apparatus of claim 19 wherein each R group is a C 1 -C 8 organic group.
38 . The apparatus of claim 37 wherein each R group is a C 1 -C 5 organic group.
39 . The apparatus of claim 38 wherein each R group is a C 1 -C 4 alkyl moiety.
40 . The apparatus of claim 19 wherein the precursor composition is a liquid.
41 . The apparatus of claim 40 wherein the liquid precursor composition comprises a solid dissolved in a solvent.
42 . A chemical vapor deposition apparatus comprising:
a deposition chamber having a substrate positioned therein; a vessel containing a precursor composition comprising one or more platinum complexes and a precursor composition comprising one or more complexes of the formula: L y IrY z , wherein:
each L group is independently a neutral or anionic ligand;
each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N 2 , PX 3 , PR 3 , P(OR) 3 , AsX 3 , AsR 3 , As(OR) 3 , SbX 3 , SbR 3 , Sb(OR) 3 , NH x R 3-x , CNR, and RCN, wherein R is an organic group, X is a halide, and x =0 to 3;
y=1 to 4; and
z=1 to 4; and
a source of an inert carrier gas for transferring the precursor composition to the chemical vapor deposition chamber.
43 . The apparatus of claim 42 wherein the substrate is a semiconductor substrate.
44 . The apparatus of claim 43 wherein the semiconductor substrate is a silicon wafer or a gallium arsenide wafer.
45 . The apparatus of claim 42 wherein each R group is a C 1 -C 8 organic group.
46 . The apparatus of claim 45 wherein each R group is a C 1 -C 5 organic group.
47 . The apparatus of claim 46 wherein each R group is a C 1 -C 4 alkyl moiety.
48 . The apparatus of claim 42 wherein the precursor composition comprising one or more platinum complexes is the same as the precursor composition comprising one or more complexes of the formula L y IrY z .
49 . The apparatus of claim 42 wherein the precursor compositions are each liquids.
50 . The apparatus of claim 49 wherein the liquid precursor compositions comprise a solid dissolved in a solvent.
51 . The apparatus of claim 42 wherein the platinum precursor composition comprises CpPt(Me) 3 , wherein Me is a methyl group and Cp is cyclopentadienyl.Join the waitlist — get patent alerts
Track US2002146902A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.