Multilayered body for photolithographic patterning

Abstract

Disclosed is a novel multilayered body for photolitho-graphic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.

What is claimed is:  
     
         1 . A multilayered body for photolithographic patterning of a photoresist layer which comprises, as an integrally layered body: 
 (a) a substrate;    (b) a water-insoluble anti-reflection film formed on the surface of the substrate in a thickness in the range from 30 to 300 nm; and    (c) a photoresist layer having a thickness in the range from 200 to 500 nm formed on the anti-reflection film from a negative-working photoresist composition comprising, as a uniform solution in an organic solvent, 
 (A) 100 parts by weight of an alkali-soluble resin;  
 (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and  
 (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.  
   
     
     
         2 . The multilayered body for photolithographic patterning of a photoresist layer as claimed in  claim 1  in which the anti-reflection coating film contains an acid.  
     
     
         3 . The multilayered body for photolithographic patterning of a photoresist layer as claimed in  claim 1  which further comprises: 
 (d) a water-soluble anti-reflection coating film formed on the photoresist layer.  
 
     
     
         4 . The multilayered body for photolithographic patterning of a photoresist layer as claimed in  claim 3  in which the water-soluble anti-reflection coating film comprises a water-soluble resinous compound and a fluoroalkyl sulfonate or a fluoroalkyl carboxylate.  
     
     
         5 . The multilayered body for photolithographic patterning of a photoresist layer as claimed in  claim 1  in which the negative-working photoresist composition further comprises: 
 (D) from 0.01 to 1.0 part by weight of an aliphatic amine compound per 100 parts by weight of the component (A).  
 
     
     
         6 . The multilayered body for photolithographic patterning of a photoresist layer as claimed in  claim 1  in which the negative-working photoresist composition further comprises: 
 (E) from 0.01 to 1.0 part by weight of a carboxylic acid, a phosphorus-containing oxoacid or an ester of a phosphorus-containing oxoacid per 100 parts by weight of the component (A).  
 
     
     
         7 . The multilayered body for photolithographic patterning of a photoresist layer as claimed in  claim 3  in which the water-soluble anti-reflection coating film has a thickness in the range from 35 to 45 nm.