Production apparatus for producing gallium nitride film semiconductor and cleaning apparatus for exhaust gas

Abstract

There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

What is claimed is:  
     
         1 . A production apparatus for producing a gallium nitride film semiconductor by subjecting gallium chloride gas as a gallium source which is generated through the circulation of hydrogen chloride gas over metallic gallium to vapor phase deposition through the reaction with ammonia so as to form a gallium nitride film, wherein an electroconductive corrosion-resistant material is used as the constructional material for exhaust piping for exhaust gas, and said exhaust piping for exhaust gas is electrically grounded.  
     
     
         2 . The production apparatus according to  claim 1 , wherein the electroconductive corrosion-resistant material is selected from the group consisting of stainless steel, high nickel steel, an electroconductive resin and a metallic material coated with an electroconductive resin.  
     
     
         3 . A cleaning apparatus for cleaning exhaust gas coming from a production apparatus for producing a gallium nitride film semiconductor by subjecting gallium chloride gas as a gallium source which is generated through the circulation of hydrogen chloride gas over metallic gallium to vapor phase deposition through the reaction with ammonia so as to form a gallium nitride film, wherein an electroconductive corrosion-resistant material is used as the constructional material for introduction piping, and said introduction piping is electrically grounded.  
     
     
         4 . The cleaning apparatus according to  claim 3 , wherein the electroconductive corrosion-resistant material is selected from the group consisting of stainless steel, high nickel steel, electroconductive resin and a metallic material coated with electroconductive resin.  
     
     
         5 . The cleaning apparatus according to  claim 3 , wherein the cleaning apparatus is a wet absorptive cleaning apparatus.  
     
     
         6 . An overall production plant for producing a gallium nitride film semiconductor by subjecting gallium chloride gas as a gallium source which is generated through the circulaton of hydrogen chloride gas over metallic gallium to vapor phase deposition through the reaction with ammonia so as to form a gallium nitride film, wherein an electroconductive corrosion-resistant material is used as the constructional material for exhaust gas piping which connects a production apparatus for producing a gallium nitride film semiconductor and a cleaning apparatus for cleaning exhaust gas, and said exhaust gas piping is electrically grounded.  
     
     
         7 . The overall production plant according to  claim 6 , wherein the electroconductive corrosion-resistant material is selected from the group consisting of stainless steel, high nickel steel, an electroconductive resin and a metallic material coated with an electroconductive resin.  
     
     
         8 . The overall production plant according to  claim 6 , wherein said plant is equipped with a means for sampling exhaust gas which circulates in the production apparatus, the cleaning apparatus or the exhaust gas piping which connects the production apparatus and the cleaning apparatus, and for detecting oxygen in said exhaust gas or measuring the concentration of oxygen therein.