Electro-optical apparatus and electronic unit

Abstract

An appropriate breakdown voltage between the source and drain of a transistor device covered with an insulating film is obtained. Even when the transistor device is used in a pixel area of an electro-optical apparatus, a sufficient aperture ratio is obtained. In addition, to prevent a reduction in the display quality of the electro-optical apparatus caused by an optical leakage current due to light incident on the transistor device, a p-type transistor having a semiconductor layer about 30 nm to 100 nm thick and a fully-depleted channel layer is used as a transistor connected to a pixel electrode in the electro-optical apparatus.

1 . An electro-optical apparatus having a plurality of scanning lines, a plurality of data lines which intersect with the plurality of scanning lines, a transistor connected to each scanning line and to each data line, and a pixel electrode connected to the transistor, 
 on a substrate in which a semiconductor layer is formed on a supporting substrate through an insulating film,    characterized in that the transistor is a p-type transistor having a fully-depleted channel layer.    
     
     
         2 . An electro-optical apparatus having integrated peripheral circuits, a plurality of scanning lines, a plurality of data lines which intersect with the plurality of scanning lines, a transistor connected to each scanning line and to each data line, and a pixel electrode connected to the transistor 
 on a substrate in which a semiconductor layer is formed on a supporting substrate through an insulating film,    characterized in that the peripheral circuits are formed of transistors having partially-depleted channel layers, and    the transistor connected to the pixel electrode is a p-type transistor having a fully-depleted channel layer.    
     
     
         3 . An electro-optical apparatus having integrated peripheral circuits, a plurality of scanning lines, a plurality of data lines which intersect with the plurality of scanning lines, a transistor connected to each scanning line and to each data line, and a pixel electrode connected to the transistor 
 on a substrate in which a semiconductor layer is formed on a supporting substrate through an insulating film,    characterized in that the peripheral circuits are formed of a combination of transistors having partially-depleted channel layers and of transistors having fully-depleted channel layers, and    the transistor connected to the pixel electrode is a p-type transistor having a fully-depleted channel layer.    
     
     
         4 . An electro-optical apparatus having integrated peripheral circuits, a plurality of scanning lines, a plurality of data lines which intersect with the plurality of scanning lines, a transistor connected to each scanning line and to each data line, and a pixel electrode connected to the transistor 
 on a substrate in which a semiconductor layer is formed on a supporting substrate through an insulating film,    characterized in that the peripheral circuits are formed of a combination of n-type transistors having partially-depleted channel layers and of p-type transistors having fully-depleted channel layers, and    the transistor connected to the pixel electrode is a p-type transistor having a fully-depleted channel layer.    
     
     
         5 . An electro-optical apparatus according to one of  claims 1  to  4 , characterized in that the semiconductor layer is made from monocrystalline silicon.  
     
     
         6 . An electro-optical apparatus according to one of  claims 1  to  4 , characterized in that the semiconductor layer is made from polycrystalline silicon.  
     
     
         7 . An electro-optical apparatus according to one of  claims 1  to  4 , characterized in that the supporting substrate is a transparent substrate.  
     
     
         8 . An electro-optical apparatus according to one of  claims 1  to  4 , characterized in that the supporting substrate is a quartz substrate.  
     
     
         9 . An electro-optical apparatus according to one of  claims 1  to  4 , characterized in that the supporting substrate is a glass substrate.  
     
     
         10 . An electro-optical apparatus according to one of  claims 1  to  4 , characterized by further comprising a light-shielding layer between the supporting substrate and the semiconductor layer.  
     
     
         11 . An electro-optical apparatus according to one of  claims 1  to  4 , characterized in that the film thickness of the fully-depleted channel layer falls in the range from 30 nm to 100 nm.  
     
     
         12 . An electro-optical apparatus according to one of  claims 1  to  11 , characterized by further comprising: 
 opposite the surface on which the semiconductor layer is formed in the substrate acting as another substrate, one substrate; and  
 liquid crystal driven by the transistors formed in the semiconductor layer and sandwiched by the one substrate and the other substrate.  
 
     
     
         13 . An electronic unit characterized by comprising: 
 a light source;    an electro-optical apparatus according to  claim 12 , to which light emitted from the light source is incident and in which modulation corresponding to image information is applied; and    projection means for projecting the light modulated by the electro-optical apparatus.