Ultra-shallow junction formation for deep sub-micron complementary metal-oxide-semiconductor

Abstract

A semiconductor substrate having an n-well region, a p-well region and shallow trench isolation (STI ) regions is provided. And Poly-gates are formed over the n-well region and p-well region respectively. First, nitrogen oxide (such as NO, N 2 O) layer are formed on surface of the foresaid structure by furnace or rapid thermal oxidation (RTO). A photoresist layer is formed over the p-well region, and then BF 2 or boron ion implantation is carried out to form a nitrogen oxide (such as NO, N 2 O) layer having boron ion in the n-well region. Another photoresist layer is formed over the n-well region after removing the photoresist layer. And then, Arsenic ion implantation is carried out to form a nitrogen oxide (such as NO, N 2 O) layer having Arsenic ion in the p-well region. Next, spacer is formed on the sidewall of gates after removing the photoresist layer. Finally, deep source/drain implantation are carried out once again. And then, ultrashallow junctions are formed in the source/drain regions of Complementary Metal-Oxide-Semiconductor devices by performing one step rapid thermal process.

What is claimed is:  
     
         1 . A method for forming a semiconductor device having shallow junctions, comprising: 
 providing a semiconductor substrate having a shallow trench isolation region, a well region with a first conductivity and a well region with a second conductivity;    forming a first gate on said well region with the first conductivity and forming a second gate on said well region with the second conductivity.    forming a first diffusion source layer on said semiconductor substrate;    forming a first photoresist layer over said well region with the second conductivity;    forming a diffusion source layer with the second conductivity by carrying out a first ion implantation with the second conductivity to dope a part of said diffusion source layer formed over said well region with the first conductivity;    removing said first photoresist layer over said well region with the second conductivity;    forming a second photoresist layer over said well region with the first conductivity;    forming a second diffusion source layer with the first conductivity by carrying out a second ion implantation with the first conductivity to dope the other part of said diffusion source layer formed over said well region with the second conductivity;    removing said second photoresist layer on said well region with the first conductivity;    forming spacers on sidewalls of said first gate and said second gate;    carrying out a third ion implantation with the first conductivity and fourth ion implantation with the second conductivity to dope respective said diffusion source layer with the first conductivity and said diffusion source layer with the second conductivity; and    forming source/drain regions and shallow junctions in said well region with the second conductivity and said well region with the first conductivity, respectively.    
     
     
         2 . The method according to  claim 1 , wherein said gates are formed on said well region with the first conductivity and said well region with the second conductivity of said semiconductor substrate by depositing and etching.  
     
     
         3 . The method according to  claim 1 , wherein said first diffusion source layer comprises a nitrogen oxide layer with a thickness of between 20 nm and 30 nm.  
     
     
         4 . The method according to  claim 1 , wherein said first diffusion source layer is formed on said semiconductor substrate by using a furnace or a rapid thermal oxidation process.  
     
     
         5 . The method according to  claim 1 , wherein said second conductivity ion implantation is carried out by using BF 2  or boron ions with an energy of between 2 KeV and 8 KeV.  
     
     
         6 . The method according to  claim 1 , wherein said first conductivity ion implantation is carried out by using arsenic ions or phosphorous ions with an energy of between 2 KeV and 8 KeV.  
     
     
         7 . The method according to  claim 1 , wherein said second diffusion source with the second conductivity comprises BF 2  or boron ion herein.  
     
     
         8 . The method according to  claim 1 , wherein said first conductivity diffusion source comprises arsenic ions or phosphorous ions herein.  
     
     
         9 . The method according to  claim 1 , wherein said spacers are formed by depositing and etching back on said gates sidewalls of semiconductor substrate;  
     
     
         10 . The method according to  claim 1 , wherein said spacers comprises nitrogen oxide.  
     
     
         11 . The method according to  claim 1 , wherein said source/drain regions and said shallow junctions in said well regions with the second and the first conductivity are formed by using said rapid themal process (RTP) method to said semiconductor substrate at about 950° C. and 1050° C. for about 10 seconds and 20 seconds.  
     
     
         12 . A method for forming a semiconductor device having shallow junctions, comprising: 
 providing a semiconductor substrate having a shallow trench isolation region and an well region with a first conductivity;    forming a gate on said well region with the first conductivity;    forming a first diffusion source layer on said semiconductor substrate;    forming a second diffusion source layer with a second conductivity by carrying out a first ion implantation with the second conductivity to dope a part of said diffusion source layer formed over said well region with the first conductivity;    forming spacers on sidewalls of said gate;    carrying out said a second ion implantation with the second conductivity once more to dope said second conductivity diffusion source layer; and    forming a source/drain region and shallow junctions in said well region with the first conductivity.    
     
     
         13 . The method according to  claim 12 , wherein said gates are formed on said well region with the first conductivity of said semiconductor substrate by depositing and etching.  
     
     
         14 . The method according to  claim 12 , wherein said first diffusion source layer comprises a nitrogen oxide layer with a thickness of between 20 nm and 30 nm.  
     
     
         15 . The method according to  claim 12 , wherein said first diffusion source layer is formed on said semiconductor substrate by using a furnace or a rapid thermal oxidation process.  
     
     
         16 . The method according to  claim 12 , wherein said first ion implantation with the second conductivity is carried out by using BF 2  or boron ions with an energy of between 2 KeV and 8 KeV.  
     
     
         17 . The method according to  claim 12 , wherein said second diffusion source with the second conductivity comprises boron ions herein.  
     
     
         18 . The method according to  claim 12 , wherein said spacers are formed by depositing and etching back on said gates sidewalls of said semiconductor substrate;  
     
     
         19 . The method according to  claim 12 , wherein said spacers further comprises nitrogen oxide.  
     
     
         20 . The method according to  claim 12 , wherein said source/drain region and said shallow junctions in said well region with the first conductivity are formed by using rapid themal process method to said semiconductor substrate at about 950° C. and 1050° C. for about 10 seconds and 20 seconds.