Method of producing semiconductor device

Abstract

A method of producing semiconductor device for reducing a gas of halogenated product of a group IVa element with H 2 by the ECR plasma CVD method to form a thin film of the group IVa element on a substrate is disclosed. This method includes forming an adhesion layer of the group IVa element in a contact hole including walls, to be in contact with the exposed substrate, the adhesion layer being formed by reducing with H 2 a gas of halogenated product of the group IVa element in an ECR plasma CVD process, the group IVa element and H 2 being used at a flow ratio of 0.4 and greater; forming a barrier layer in contact with the adhesion layer; and filling the contact hole with an electrically conductive material. The stable barrier metal is formed and an upper-layer metallization material is filled within the minute contact hole having a large aspect ratio.

What is claimed is:  
     
         1 . A method of producing semiconductor device comprising the steps of: 
 forming an insulating layer on a substrate;    forming a contact hole in the insulating layer to expose a selected portion of the substrate, the contact hole being defined by walls of the insulating layer;    forming an adhesion layer of a group IVa element in the contact hole including the walls, to be in contact with the exposed substrate, the adhesion layer being formed by reducing with H 2  a gas of halogenated product of the group IVa element in an ECR plasma CVD process, the group IVa element and H 2  being used at a flow ratio of 0.4 and greater;    forming a barrier layer in contact with the adhesion layer; and    filling the contact hole with an electrically conductive material.    
     
     
         2 . The method of producing semiconductor device as claimed in  claim 1 , wherein the barrier layer is composed of nitride of the group IVa element.  
     
     
         3 . The method of producing semiconductor device as claimed in  claim 2 , wherein the nitride of the group IVa element is formed into a film continuously on the adhesion layer.  
     
     
         4 . The method of producing semiconductor device as claimed in  claim 3 , wherein the nitride of the group IVa element is deposited by a CVD process.  
     
     
         5 . The method of producing semiconductor device as claimed in  claim 2 , wherein the nitride of the group IVa element is formed in a self-aligned manner by annealing the barrier layer of the group IVa element in a nitrogen-containing atmosphere.  
     
     
         6 . The method of producing semiconductor device as claimed in  claim 1 , wherein the group IVa element is Ti and the gas of halogenated product is TiCl 4 .