Production of semiconductor device

Abstract

A method of opposing and joining a surface of a solid device and a surf ace of a semiconductor chip. A metal electrode portion formed in a raised state on the surface of the solid device and a metal electrode portion formed in a raised state on the surface of the semiconductor chip are directly abutted and pressed against each other. In the state, ultrasonic vibration is transmitted to the metal electrode portions which are pressed against each other, to join the metal electrode portions to each other.

What is claimed is:  
     
         1 . A method of producing a semiconductor device, comprising the steps of: 
 opposing a surface of a solid device and a surface of a semiconductor chip;    directly abutting and pressing a metal electrode portion formed in a raised state on the surface of said solid device and a metal electrode portion formed in a raised state on the surface of the semiconductor chip; and    transmitting ultrasonic vibration to the metal electrode portions which are pressed against each other, to join the metal electrode portions to each other.    
     
     
         2 . The method according to  claim 1 , wherein 
 said solid device is a semiconductor chip other than said semiconductor chip.    
     
     
         3 . The method according to  claim 1 , wherein 
 said solid device is a wiring board.    
     
     
         4 . The method according to  claim 1 , wherein 
 the metal electrode portions which are respectively formed in a raised state on the surfaces of said solid device and the semiconductor chip are bumps composed of gold.    
     
     
         5 . The method according to  claim 1 , wherein 
 said ultrasonic vibration is inputted to said semiconductor chip or the solid device, and is transmitted to a joint surface between the metal electrode portion on the semiconductor chip and the metal electrode portion on the solid device upon propagating through the semiconductor chip or the solid device.