Low-reflective thin-film substrate

Abstract

A low-reflective thin-film substrate comprising a transparent glass substrate having formed by sputtering a thin film in multilayer containing no chromium series component and made up of at least one kind of Ni, Fe, Co, Mo, W, Ta, Cu, and Nb as a main constituent form or as an alloy thereof, the thin film having a minimum reflectivity of 0.5% or lower and the optical density of at least 4 or having a minimum reflectivity of 0.1% or lower, a maximum reflectivity of 2.0% or lower, an average reflectivity of 0.3% or lower, and an optical density of at least 4.0, in the visible light region. The low-reflective thin-film substrate is useful as a black matrix for a color filter substrate of a liquid crystal panel, etc., and is free from an environmental pollution caused by the use of a chromium component as the target material.

What is claimed is:  
     
         1 . A low-reflective thin-film substrate comprising a transparent glass substrate having formed thereon by sputtering a thin film made up of at least one kind of Ni, Fe, Co, Mo, W, Ta, and Nb having a minimum reflectivity of 0.5% or lower and an optical density of at least 4 in the visible light region.  
     
     
         2 . A low-reflective thin-film substrate of  claim 1 , wherein the thin film is formed in multilayer on the transparent glass substrate by sputtering a target material containing no chromium component and made up of at least one kind of Ni, Fe, Co. Mo, W, Ta, and Nb.  
     
     
         3 . A low-reflective thin-film substrate of  claim 1  or  2 , wherein the thin film is formed by sputtering under a gas atmosphere of at least one kind of an inert gas, an oxygen gas, and a carbon oxide gas in a vacuum film-forming apparatus.  
     
     
         4 . A low-reflective thin-film substrate of  claim 1  to  3 , wherein an alloy of at least one kind of Ni, Fe, and Co and at least one kind of Mo, W, Ta, and Nb is used as the target material.  
     
     
         5 . A low-reflective thin-film substrate of  claim 1  to 3, wherein an alloy of at least two kinds of Ni, Fe, and Co is used as the target material.  
     
     
         6 . A low-reflective thin-film substrate of  claim 2  to  5 , wherein the target material contains at least one kind of Cu, Ti, Zr, and Sn.  
     
     
         7 . A low-reflective thin-film substrate comprising a transparent glass substrate having formed thereon by sputtering an aluminum series thin film having a minimum reflectivity of 0.5% or lower and an average reflectivity of 2% or lower in the visible light region.  
     
     
         8 . A low-reflective thin-film substrate of  claim 7 , wherein the optical density of the aluminum sries thin film is at least 4.  
     
     
         9 . A low-reflective thin-film substrate of  claim 7  or  8 , wherein the aluminum series thin film is formed on the transparent glass substrate by sputtering of the target material containing no chromium component and made up of aluminum as a main constituent.  
     
     
         10 . A low-reflective thin-film substrate of  claim 7  to  9 , wherein the aluminum series thin film is formed in multilayer.  
     
     
         11 . A low-reflective thin-film substrate of  claim 7  to  10 , wherein the thin film is formed by sputtering under a gas atmosphere of at least one kind of an inert gas, an oxygen gas, and a carbon oxide gas in a vacuum film-forming apparatus.  
     
     
         12 . A low-reflective thin-film substrate comprising a transparent glass substrate having formed thereon by sputtering a thin film having a minimum reflectivity of 0.1% or lower, a maximum reflectivity of 2.0% or lower, and an average reflectivity of 0.3% or lower in the visible light region.  
     
     
         13 . A low-reflective thin-film substrate of  claim 12 , wherein the optical density of the thin film is at least 4.0.  
     
     
         14 . A low-reflective thin-film substrate of  claim 12  or  13 , wherein Ta is formed on the transparent glass substrate in multilayer as the thin film by sputtering of a target material.  
     
     
         15 . A low-reflective thin-film substrate of  claim 12  to  14 , wherein the thin film is formed by sputtering under a gas atmosphere of at least one kind of an inert gas, an oxygen gas, and a carbon oxide gas in a vacuum film-forming apparatus.  
     
     
         16 . A low-reflective thin-film substrate of  claim 12  to  15 , wherein a Ta alloy containing at least one kind of Ni, Fe, Co, W, Nb, Cu, Ti, Zr, and Sn is used as the target material.