Atmospheric pressure plasma etching reactor

Abstract

An atmospheric pressure plasma etching reactor has a table holding a wafer to be processed and which moves the wafer to be processed under at least one electrode that is mounted in close proximity to the table and defines an entry of a gas mixture. With a radio-frequency voltage connected between the table and the at least one electrode, a plasma is created between the at least one electrode and the wafer to be processed processing the wafer to be processed as it is moved under the at least one electrode by the table.

What is claimed is:  
     
         1 . An atmospheric pressure plasma etching reactor comprising: 
 a table for holding and moving a wafer to be processed;    at least one atmospheric pressure plasma processor, said at least one atmospheric pressure plasma processor having an electrode situated in close proximity to said table, and defining an entry for introduction of a gas mixture;    wherein with a radio-frequency voltage connected between said table and said electrode of said least one atmospheric pressure plasma processor and said gas mixture introduced into said at least one atmospheric pressure plasma processor, a plasma is created between said wafer to be processed and said electrode of said at least one atmospheric pressure plasma processor for processing said wafer to be processed as it is moved under said at least one atmospheric pressure plasma processor by said table.    
     
     
         2 . The atmospheric pressure plasma etching reactor described in  claim 1  further comprising temperature control channels in said least one atmospheric pressure plasma processor.  
     
     
         3 . The atmospheric pressure plasma etching reactor described in  claim 1  further comprising baffles for distributing said gas mixture throughout said least one atmospheric pressure plasma processor.  
     
     
         4 . The atmospheric pressure plasma etching reactor described in  claim 1  further comprising controllable heating elements in said table.  
     
     
         5 . The atmospheric pressure plasma etching reactor described in  claim 1  further comprising a motor for moving said table under said at least one electrode.  
     
     
         6 . The atmospheric pressure plasma etching reactor as described in  claim 1  wherein said least one atmospheric pressure plasma processor comprises one atmospheric pressure plasma processor.  
     
     
         7 . The atmospheric pressure plasma etching reactor as described in  claim 1  wherein said at least one atmospheric pressure plasma processor comprises two atmospheric pressure plasma processors.  
     
     
         8 . The atmospheric pressure plasma etching reactor as described in  claim 1 , wherein said gas mixture comprises helium and carbon tetrafluoride.  
     
     
         9 . The atmospheric pressure plasma etching reactor as described in  claim 1 , wherein said gas mixture comprises helium and oxygen.  
     
     
         10 . The atmospheric pressure plasma etching reactor as described in  claim 1 , wherein said gas mixture comprises helium and hydrogen.