Apparatus for producing thin films

Abstract

The present invention provides a heat treatment apparatus capable of forming a uniform thin layer on the substrate provided with a furnace core pipe, a substrate supporting boat for supporting a lot of substrates disposed in the furnace core pipe and a process gas injector pipe having many blowing holes for spouting the process gas toward the substrate, the supporting boat having a rotation mechanism to rotate around the normal line passing through one principal face of the substrate as a rotation axis. In the apparatus, an inert gas injector pipe has the same number of inert gas or nitrogen gas blowing holes as the number of process gas blowing holes and is provided at an approximately symmetrical position relative to the center line of the rotation axis.

What is claimed is:  
     
         1 . An apparatus for producing thin films comprising: 
 a furnace core pipe;    a substrate supporting boat for supporting a lot of substrates disposed in said furnace core pipe;    a first gas injector pipe having many first blowing holes for spouting the first gas comprising a process gas toward the substrate, the supporting boat having a rotation mechanism for allowing the boat to rotate using a normal line passing through the center of a principal face of the substrate as a rotation axis; and    a second gas injector pipe having second blowing holes for spouting a second gas and being provided at an opposite position at which the second gas collides with said first gas on a surface of the substrate, said second gas consisting essentially of an inert gas or nitrogen gas.    
     
     
         2 . An apparatus according to  claim 1 , wherein said first gas injector pipe is provided at an approximately symmetrical position against the second gas injection pipe relative to the center line of the rotation axis.  
     
     
         3 . An apparatus according to  claim 2 , said first and said second gas injector pipes making a pair of pipes as a first pair of pipes, said apparatus further comprising another pair of pipes similar to said first pair of pipes as a second pair of pipes, each of said second pair of pipes being provide in a different position from said first pair of pipes but having the same position relation relative to the center line as said first pair of pipes.  
     
     
         4 . An apparatus according to  claim 2 , wherein the first and the second blowing holes are provided in the first and the second gas injectors, respectively, at the positions where the first and the second gases are blown along the direction in confronting relation with each other.  
     
     
         5 . An apparatus according to  claim 4 , wherein said first and said second gases are simultaneously supplied with each other along the substrate face.  
     
     
         6 . An apparatus according to  claim 5 , wherein said first gas and said second gas are approximately equal in a supplied amount to each other.  
     
     
         7 . An apparatus according to  claim 6 , further comprising gas heating means for supplying said first and second gases, respectively, approximately at the same temperature with each other.  
     
     
         8 . An apparatus according to  claim 6 , further comprising gas supply control means for supplying said first and second gases, respectively, approximately at the same flow speed with each other.  
     
     
         9 . An apparatus according to  claim 6 , wherein said first gas contains a component that forms a phosphosilicate glass after a reaction.  
     
     
         10 . An apparatus according to  claim 6 , wherein said first gas contains a component that forms a silicon oxide film as a reaction product after a reaction.  
     
     
         11 . An apparatus according to  claim 6 , wherein the substrate consists essentially of a glass substrate or a silicon wafer and has a surface on which the thin film is formed comprises a glass surface.