Edge-emitting light-emitting semiconductor device and method of manufacture thereof

Abstract

A side-emission type semiconductor light-emitting device 10 includes a substrate 12, and the substrate 12 is provided with a case 14 formed of a resin having opacity and reflectivity. The substrate 12 is formed, on its surface, with electrodes 18 a and 18 b onto which an LED chip 20 is bonded. A transparent or translucent resin 16 is charged between the substrate 12 and the case 14 whereby the LED chip 20 is molded. A light-emitting surface of the side-emission type semiconductor light-emitting device 10 includes surfaces 16 a, 16 b and a surface opposite to the surface 16 b which are formed of the transparent or translucent resin 16. Furthermore, the light-emitting surface is formed by a roughened surface. Due to this, a light outputted from the LED chip and a light reflected from the case 14 is scattered by the light-emitting surface.

What is claimed is:  
     
         1 . A side-emission type semiconductor light-emitting device, comprising: 
 a substrate formed with an electrode;    an LED chip bonded onto said electrode; and    a transparent or translucent resin with which said LED chip is molded, wherein 
 said transparent or translucent resin has a light-emitting surface formed by a roughened surface being perpendicular to said substrate.  
   
     
     
         2 . A side-emission type semiconductor light-emitting device according to  claim 1 , wherein said light-emitting surface is formed by dicing.  
     
     
         3 . A manufacturing method of a side-emission type semiconductor light-emitting device, comprising the following steps of: 
 (a) mounting two reflectors having openings opposed with each other on a substrate mounted with an LED chip;    (b) injecting a transparent or translucent resin at an opposing portion of said openings; and    (c) dicing said transparent or translucent resin being hardened and said substrate at said opposing portion.    
     
     
         4 . A side-emission type semiconductor light-emitting device, comprising: 
 a substrate formed with an electrode;    an LED chip bonded onto said substrate;    a transparent or translucent resin with which said LED chip is molded; and    a reflector which reflects a light emitted from said LED chip, wherein said transparent or translucent resin has a convex portion, and said reflector has a concave portion to be fitted into said convex portion.    
     
     
         5 . A side-emission type semiconductor light-emitting device according to  claim 4 , wherein said concave portion is a throughole having a diameter which becomes larger from one main surface to other main surface of said reflector.  
     
     
         6 . A side-emission type semiconductor light-emitting device according to  claim 5 , wherein said one main surface is a surface brought into contact with said transparent or translucent resin, and said other main surface is a surface exposed to outside.  
     
     
         7 . A side-emission type semiconductor light-emitting device according to any one of  claims 4  to  6 , wherein said LED chip has a bonding wire extending from a top surface, and said concave portion is formed directly above said LED chip.  
     
     
         8 . A manufacturing method of a side-emission type semiconductor light-emitting device, comprising the following steps of: 
 (a) mounting a reflector formed with a concave portion on a substrate;    (b) removing an organic matter adhering to a surface, including an inner surface of said concave portion, of said reflector; and    (c) injecting a transparent or translucent resin between said reflector and said substrate up to said concave portion.    
     
     
         9 . A manufacturing method of a side-emission type semiconductor light-emitting device according to  claim 8 , wherein said reflector is subjected to UV cleaning in the step (b).  
     
     
         10 . A side-emission type semiconductor light-emitting device, comprising: 
 a substrate formed with an electrode; and    an LED chip which is bonded onto said electrode by a bonding paste, wherein 
 said LED chip has a transparent or translucent base and a light-emitting layer formed thereon, and is mounted on a position deviated from an application position of said bonding paste to a light emitting surface side.  
   
     
     
         11 . A side-emission type semiconductor light-emitting device according to  claim 10 , wherein said electrode includes an application area having a center deviated from a mounted position of said LED chip to an opposite direction of said light-emitting surface.  
     
     
         12 . A side-emission type semiconductor light-emitting device according to  claim 11 , wherein said electrode further includes an auxiliary area formed closer to said light-emitting surface side than said application area and a narrow connecting portion connecting said application area and said auxiliary area.  
     
     
         13 . A side-emission type semiconductor light-emitting device according to  claim 11  or  12 , wherein a center of said application area is deviated from a center of said substrate to said opposite direction.