Flip chip type semiconductor device and method for manufacturing the same

Abstract

A multilayer wiring structure is formed on a flat metal plate and then an entire surface of the metal plate is etched away to thereby leave only a multilayer wiring layer. An insulating substrate having through hole sections is bonded to the multilayer wiring layer, a conductive bonding agent is embedded into the through hole section, a semiconductor chip is mounted and a solder ball is coupled.

What is claimed is:  
     
         1 . A flip chip type semiconductor device comprising: 
 a multilayer wiring layer having a multilayer wiring structure;    a substrate consisting of one of an insulating substrate or a multilayer wiring substrate having penetrating holes embedded with a conductive material;    a bonding agent film interposed between said multilayer wiring layer and said substrate, and bonding said multilayer wiring layer to said substrate; and    a semiconductor chip mounted on said multilayer wiring layer.    
     
     
         2 . A flip chip type semiconductor device according to  claim 1 , wherein 
 said conductive material is a conductive bonding agent; and    said device further comprising: 
 terminal balls coupled to said conductive bonding agent on a surface of said substrate.  
   
     
     
         3 . A flip chip type semiconductor device according to  claim 1 , comprising: 
 an external electrode pad formed on an uppermost layer of said multilayer wiring layer; and    a bump electrode provided on said semiconductor chip and connected to said external electrode pad.    
     
     
         4 . A flip chip type semiconductor device according to  claim 1 , comprising: 
 an insulating resin layer for embedding side of said semiconductor chip; and    a radiating heat spreader coupled to said semiconductor chip.    
     
     
         5 . A flip chip type semiconductor device according to  claim 1 , comprising: 
 a radiating heat spreader coupled to said semiconductor chip; and    a stiffener arranged on each side of said semiconductor chip and interposed between said heat spreader and said multilayer wiring layer.