Semiconductor device

Abstract

In a semiconductor device, an imbedded insulating layer is formed in a semiconductor substrate. A plurality of electric circuits are formed on the imbedded insulating layer so as to be insulated each other, and are capacitively coupled through the semiconductor substrate. Wiring layers are formed on the electric circuits, and include inside electrodes which are capacitively coupled to the electric circuits. The electric circuits are connected through capacitors which are formed through the semiconductor substrate, and through capacitors which are formed through the electrodes.

What is claimed is:  
     
         1 . A semiconductor device comprising: 
 an imbedded insulating layer formed in a semiconductor substrate;    at least two electric circuits formed on said imbedded insulating layer so as to be insulated each other, and capacitively coupled through said semiconductor substrate; and    a wiring layer formed on said electric circuits, and including inside electrodes which are capacitively coupled to said electric circuits;    wherein said electric circuits are connected through capacitors formed through said semiconductor substrate and capacitors formed through said electrodes.    
     
     
         2 . A semiconductor device according to  claim 1 , wherein one of said electric circuits is a driver circuit for generating an alternating wave, and another electric circuit is a charge pump circuit.  
     
     
         3 . A semiconductor device according to  claim 2 , wherein said charge pump circuit controls a switch circuit which turns on and off a power source of said other electric circuit.  
     
     
         4 . A semiconductor device according to  claim 1 , wherein said semiconductor substrate includes a trench for insulatingly separating said electric circuits.  
     
     
         5 . A semiconductor device according to  claim 1 , wherein one of said electric circuits is a driver circuit for transmitting a signal, and another electric circuit is a receiver circuit.  
     
     
         6 . A semiconductor device according to  claim 1 , wherein a number of said capacitively-coupled electric circuits is more than two.  
     
     
         7 . A semiconductor device comprising: 
 an imbedded insulating layer formed in a semiconductor substrate;    a plurality of electric circuits formed on said imbedded insulating layer so as to be insulated each other, and capacitively coupled through said semiconductor substrate; and    wiring layers formed on said electric circuits, and including inside capacitors connected to said electric circuits,    wherein said electric circuits are coupled through said capacitors and through capacitors which are formed through said semiconductor substrate.