Semiconductor device

Abstract

A plurality of semiconductor elements are formed at a predetermined interval on a surface of a GaAs substrate, and the semiconductor substrate is worked to a predetermined thickness. On the other hand, an aluminum nitride plate having a flat upper surface and a lower surface, where a plurality of grooves are formed on at an interval which is substantially the same as the interval between the semiconductor elements, is prepared. Next, the semiconductor substrate, a bonding resin, and the aluminum nitride plate are stacked so as to align positions of grooves with positions between the semiconductor elements. Then, the lower surface of the semiconductor substrate is adhered to the upper surface of the plate member using a bonding resin. The thus adhered body of the GaAs substrate and the aluminum nitride plate is broken along the grooves into a plurality of pellets, thereby manufacturing semiconductor devices.

What is claimed is:  
     
         1 . A semiconductor device comprising: 
 a semiconductor element;    a semiconductor substrate made of a III-V group material, the semiconductor element being formed on the semiconductor substrate; and    a heat sink made of a plate member adhered to said semiconductor substrate, the thermal expansion coefficient of the plate member being substantially equal to the thermal expansion coefficient of said semiconductor substrate,    wherein irregularity is formed in a surface of said plate member to which said semiconductor substrate is not adhered.    
     
     
         2 . The semiconductor device according to  claim 1 , wherein said plate member is made of aluminum nitride.  
     
     
         3 . The semiconductor device according to  claim 1 , wherein said III-V group semiconductor substrate is made of GaAs.  
     
     
         4 . The semiconductor device according to  claim 1 , wherein said semiconductor device is a pellet having said semiconductor element.