US2002117467A1PendingUtilityA1

Ring crystalline body and production method thereof

Priority: Feb 26, 2001Filed: Aug 24, 2001Published: Aug 29, 2002
Est. expiryFeb 26, 2021(expired)· nominal 20-yr term from priority
H10N 60/01C30B 11/12C30B 9/00C30B 23/00C30B 29/46C30B 29/60H10N 60/0212
21
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Claims

Abstract

To provide a ring crystalline body, which is a ring crystalline body with a small diameter and formed with a thin line and capable of providing electric conduction along the ring, and to provide a production method of the ring crystalline body. A droplet is stuck to a surface of a substrate and then the droplet is evaporated to a discontinuous underlayer ring having an ultrafine three-dimensional structure on the substrate surface. After that, when a transition metal dichalcogenide, a transition metal trichalcogenide, or a low-dimensional conductor as raw material gas is evaporated, a ring crystalline body comprising the raw material is grown along the underlayer ring.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A ring crystalline body comprising a circularly continuous crystalline transition metal dichalcogenide or transition metal trichalcogenide.  
     
     
         2 . A ring crystalline body comprising a circularly continuous crystalline low-dimensional conductor.  
     
     
         3 . The ring crystalline body according to  claim 1  or  claim 2 , wherein the crystallinity is a single crystal.  
     
     
         4 . A production method of a ring crystalline body comprising the steps of: 
 forming a continuous or discontinuous underlayer ring having an ultrafine three-dimensional structure in the substrate surface; and    circularly growing a crystal along the underlayer ring.    
     
     
         5 . The production method according to  claim 4 , wherein the underlayer ring is formed by sticking droplets of an underlayer ring material to the substrate surface and evaporating the droplets.  
     
     
         6 . The production method according to  claim 4 , wherein the crystal is grown by evaporation.  
     
     
         7 . The production method according to  claim 4 , wherein the crystal is grown by sputtering.

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