Method of manufacturing a semiconductor device

Abstract

There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

What is claimed is:  
     
         1 . An electroluminescence display device comprising at least a thin film transistor including: 
 a substrate;    an buried oxide film bonded on the substrate;    a single crystal semiconductor island on the buried oxide film;    at least a source region, a drain region and a channel region between the source and drain regions;    a gate insulating film on the single crystal semiconductor island;    a gate electrode over the single crystal semiconductor island with the gate insulating film interposed therebetween;    an interlayer insulating film over the single crystal semiconductor island, the gate insulating film and the gate electrode;    at least an electrode connected to one of the source and drain regions through a contact hole in the interlayer insulating film.    
     
     
         2 . A device according to  claim 1 , 
 wherein the substrate is one selected from the group consisting of a silicon substrate, a quartz substrate, a ceramic substrate, and a crystallized glass substrate.    
     
     
         3 . A device according to  claim 1 , 
 wherein each of the source and drain regions comprises silicide.    
     
     
         4 . A device according to  claim 1 , 
 wherein the interlayer insulating film comprises at lease one selected from the group consisting of a resin film, a silicon oxide film, a silicon nitride film and a silicon nitride oxide film.    
     
     
         5 . A device according to  claim 1 , 
 wherein electroluminescence display device comprises at least one selected from the group consisting of a D/A converter, a correction circuit, and a signal dividing circuit.    
     
     
         6 . A device according to  claim 1 , 
 wherein the electroluminescence display device is in combination with an electric apparatus,    wherein the electric apparatus is one selected from the group consisting of a video camera, a digital camera, a projector (rear type or front type), a head mount display (a goggle type display), a car navigation system, a personal computer, a portable information terminal such as a mobile computer, a portable telephone, or an electric book.    
     
     
         7 . A device according to  claim 1 , 
 wherein the single crystal semiconductor island is formed by epitaxial growth.    
     
     
         8 . A device according to  claim 1 , 
 wherein the single crystal semiconductor island comprises single crystal silicon.