Method for the manufacture of semiconductor devices and circuits

Abstract

An apparatus having a single crystal semiconductor layer on a surface of a substrate comprising a polycrystalline semiconductor material such that the single crystal layer and the polycrystalline material are in direct contact.

What is claimed is:  
     
         1 . An apparatus comprising: 
 a circuit substrate comprising a junction of a single crystal semiconductor layer and a polycrystalline semiconductor material; and    circuit devices formed in the substrate.    
     
     
         2 . The apparatus of  claim 1 , wherein the circuit devices are formed in the single crystal layer of the circuit substrate.  
     
     
         3 . The apparatus of  claim 1 , wherein the junction comprises a diffusion bond between the single crystal layer and the polycrystalline material.  
     
     
         4 . An apparatus comprising: 
 a substrate comprising a polycrystalline semiconductor material; and    a single crystal semiconductor structure coupled to a surface of the substrate.    
     
     
         5 . The apparatus of  claim 4  further comprising: 
 a dielectric material interdisposed between the single crystal semiconductor structure and the surface of the substrate.  
 
     
     
         6 . The apparatus of  claim 4 , wherein the single crystal semiconductor structure and the substrate are in direct contact.