US2002105068A1PendingUtilityA1

Stacked semiconductor device structure

Assignee: MITSUBISHI ELECTRIC CORPPriority: Feb 5, 2001Filed: Sep 7, 2001Published: Aug 8, 2002
Est. expiryFeb 5, 2021(expired)· nominal 20-yr term from priority
H10W 90/297H10W 90/22H10W 90/20H10W 72/834H10W 70/60H10W 70/40H10W 90/00H05K 2201/049H05K 2201/10378H05K 2201/10386H05K 2201/10515H05K 3/3436H05K 2201/10689H05K 2203/1572H05K 1/141H05K 3/3421H05K 1/183H05K 2201/10477H05K 1/182H05K 1/144
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Claims

Abstract

A stacked semiconductor device structure comprising: a plurality of semiconductor modules each of which includes a substrate and at least one semiconductor device mounted on the substrate; a stacking device for stacking the semiconductor modules on one another; and a surface mount device for surface mounting on a further substrate for a system appliance the semiconductor modules stacked on one another by the stacking device.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A stacked semiconductor device structure comprising: 
 a plurality of semiconductor modules each of which includes a substrate and at least one semiconductor device mounted on the substrate;    a stacking means for stacking the semiconductor modules on one another; and    a surface mount means for surface mounting on a further substrate for a system appliance the semiconductor modules stacked on one another by the stacking means.    
     
     
         2 . A stacked semiconductor device structure according to  claim 1 , wherein the stacking means and the surface mount means are constituted by clip type leads.  
     
     
         3 . A stacked semiconductor device structure according to  claim 1 , wherein the stacking means and the surface mount means are constituted by pin type leads.  
     
     
         4 . A stacked semiconductor device structure according to  claim 1 , wherein the stacking means includes solder balls provided between the substrates of neighboring ones of the semiconductor modules.  
     
     
         5 . A stacked semiconductor device structure according to  claim 4 , wherein the stacking means includes an interconnection substrate formed with only a wiring pattern and having a through-hole and the interconnection substrate is provided between the substrates of neighboring ones of the semiconductor modules such that the semiconductor device is partially fitted into the through-hole.  
     
     
         6 . A stacked semiconductor device structure according to  claim 4 , wherein the stacking means includes an interconnection substrate formed with only a wiring pattern and split into a plurality of substrate sections and the interconnection substrate is provided between the substrates of neighboring ones of the semiconductor modules such that the semiconductor device is partially fitted into a clearance between neighboring ones of the substrate sections.  
     
     
         7 . A stacked semiconductor device structure according to  claim 1 , wherein the stacking means includes a flexible wiring board and a fixing pin provided between the substrates of neighboring ones of the semiconductor modules.  
     
     
         8 . A stacked semiconductor device structure according to  claim 1 , wherein the surface mount means includes solder balls provided beneath the substrate of a lowermost one of the semiconductor modules.  
     
     
         9 . A stacked semiconductor device structure according to  claim 8 , wherein the surface mount means includes an interconnection substrate formed with only a wiring pattern and having a through-hole and the interconnection substrate is provided under the substrate of the lowermost one of the semiconductor modules such that the semiconductor device is partially fitted into the through-hole.  
     
     
         10 . A stacked semiconductor device structure according to  claim 8 , wherein the surface mount means includes an interconnection substrate formed with only a wiring pattern and split into a plurality of substrate sections and the interconnection substrate is provided under the substrate of the lowermost one of the semiconductor modules such that the semiconductor device is partially fitted into a clearance between neighboring ones of the substrate sections.  
     
     
         11 . A stacked semiconductor device structure according to  claim 8 , wherein the solder balls are arranged in a rectangular array and a dummy solder ball is provided outside each of four comers of the rectangular array of the solder balls.  
     
     
         12 . A stacked semiconductor device structure according to  claim 8 , wherein a distance between one of the solder balls and each of the remaining ones of the solder balls is set at a product of a desired pitch and an integer.  
     
     
         13 . A stacked semiconductor device structure according to  claim 1 , wherein the substrate is formed with a recess such that the semiconductor device is partially fitted into the recess.  
     
     
         14 . A stacked semiconductor device structure according to  claim 1 , wherein the substrate is formed with a through-hole such that the semiconductor device is partially fitted into the through-hole.  
     
     
         15 . A stacked semiconductor device structure according to  claim 1 , wherein the substrate is split into a plurality of substrate sections such that the semiconductor device is partially fitted into a clearance between neighboring ones of the substrate sections.  
     
     
         16 . A stacked semiconductor device structure according to  claim 1 , wherein in one of the semiconductor modules, the semiconductor device includes a package and a plurality of L-shaped leads for mounting the package on the substrate and an upper face of a distal end portion of each of the L-shaped leads is attached to a lower face of the substrate.  
     
     
         17 . A stacked semiconductor device structure according to  claim 1 , wherein in one of the semiconductor modules, a plurality of the semiconductor devices are mounted on the substrate and each include a package and a plurality of leads for mounting the package on the substrate such that the leads of the semiconductor devices are arranged at an identical pitch; 
 wherein centers of the packages of the semiconductor devices are spaced an interval not more than the pitch from one another.    
     
     
         18 . A stacked semiconductor device structure comprising: 
 a semiconductor module which includes a substrate and a plurality of semiconductor devices mounted on the substrate; and    an interconnection substrate which is formed with only a wiring pattern and is provided under the substrate.    
     
     
         19 . A stacked semiconductor device structure according to  claim 18 , wherein an outer contour of the substrate of the semiconductor module as observed from above is surrounded by an outer contour of the interconnection substrate as observed from above.  
     
     
         20 . A stacked semiconductor device structure comprising: 
 a semiconductor module which includes a substrate formed with a recess and a plurality of semiconductor devices mounted on the substrate; and    a surface mount means for surface mounting the semiconductor module on a further substrate for a system appliance such that one of the semiconductor devices is fitted into the recess.

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