Polishing method using dynamic feedback recipe

Abstract

A polishing method using a dynamic feedback recipe is disclosed. The polishing method includes steps of providing a first recipe, polishing a first wafer according to the first recipe, measuring the first wafer to obtain a first determined data from the first wafer, calculating a second recipe according to a specific equation and the first determined data, and replacing the first recipe with the second recipe and polishing a second wafer according to the second recipe.

What is claimed is:  
     
         1 . A polishing method using a dynamic feedback recipe, comprising steps of: 
 providing a first recipe;    polishing a first wafer according to said first recipe;    measuring said first wafer to obtain a first determined data from said first wafer;    calculating a second recipe according to a specific equation and said first determined data; and    replacing said first recipe with said second recipe and polishing a second wafer according to said second recipe.    
     
     
         2 . The method according to  claim 1 , wherein each of said first wafer and said second wafer comprises an integrated circuit (IC) thereon.  
     
     
         3 . The method according to  claim 1 , wherein said first recipe is a predetermined recipe.  
     
     
         4 . The method according to  claim 1 , wherein said first wafer is driven by a carrier and polished by a polishing pad via a relative motion.  
     
     
         5 . The method according to  claim 4 , further comprising a carrier film disposed between said carrier and said first wafer for protecting said first wafer.  
     
     
         6 . The method according to  claim 1 , wherein said second wafer is driven by a carrier and polished by a polishing pad via a relative motion.  
     
     
         7 . The method according to  claim 1 , wherein said polishing method is a chemical mechanical polishing method employing a chemical mechanical polishing apparatus.  
     
     
         8 . The method according to  claim 1 , wherein said specific equation is stored in a dynamic recipe calculating device.  
     
     
         9 . The method according to  claim 1 , wherein said first recipe and second recipe are selected from one group consisting of a rotation speed and a pressure of said carrier, a rotation speed and a pressure of a turn table in a polishing apparatus, a back side pressure (BSP), a slurry flow rate, a dressing time and a dressing pressure of a pad conditioner and a combination thereof.  
     
     
         10 . The method according to  claim 9 , wherein said first determined data is obtained by a measuring apparatus which is disposed in said polishing apparatus.  
     
     
         11 . The method according to  claim 9 , wherein said first determined data is obtained by a measuring apparatus which is disposed out of said polishing apparatus.  
     
     
         12 . The method according to  claim 1 , wherein said first determined data is a ratio of a central removed amount and an edge removed amount of said wafer.  
     
     
         13 . The method according to  claim 1 , wherein said specific equation is y 2 =y 1 +a (y 0 −y 1 )+b, and a is said first determined data, y is a recipe for adjusting, and b is a coefficient.  
     
     
         14 . The method according to  claim 1 , further comprising steps of: 
 providing a plurality of wafers;    measuring said second wafer to obtain a second determined data from said second wafer;    calculating a third recipe according to said specific equation and said second determined data;    replacing said second recipe with said third recipe and polishing a third wafer according to said third recipe; and    repeating said measuring step, said calculating step, and polishing step to said plural wafers till said plural wafers are polished to obtain a plurality of polished wafers.    
     
     
         15 . The method according to  claim 14 , wherein said specific equation is y i+2 =y i+1 +a (y i −y i−1 )+b, and a is said first determined data, y is a recipe for adjusting, i=0˜n and b is a coefficient.  
     
     
         16 . The method according to  claim 14 , further comprising a testing step after polishing for a certain period of time.  
     
     
         17 . The method according to  claim 16 , wherein said testing step comprises: 
 providing a test wafer selected from said plurality of polished wafers;    polishing said test wafer according to a testing recipe; and    calculating a removed amount of said test wafer to obtain a polishing rate and an uniformity of said test wafer for determining whether to change said polishing pad.    
     
     
         18 . The method according to  claim 17 , wherein said test wafer is a blank wafer having a film thereon.