Thin-film semiconductor device and method of manufacturing the same

Abstract

A thin-film semiconductor device with a reduced influence on a device formation layer in separation and a method of manufacturing the device are provided. The manufacturing method includes the step of preparing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer, the separation step of separating the member at the separation layer by a pressure of a fluid, and the chip forming step of, after the separation step, forming the semiconductor film into chips.

What is claimed is:  
     
         1 . A method of manufacturing a thin-film semiconductor device, comprising: 
 the step of preparing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer;    the separation step of separating the member at the separation layer by a pressure of a fluid; and    the chip forming step of, after the separation step, forming the semiconductor film into chips.    
     
     
         2 . The method according to  claim 1 , wherein the member is obtained by forming a porous layer on a surface of a semiconductor substrate, forming the semiconductor film on a surface of the porous layer, and then forming the semiconductor element and/or semiconductor integrated circuit.  
     
     
         3 . The method according to  claim 2 , wherein the semiconductor film is formed on the surface of the porous layer after forming a protective film on inner walls of pores in the porous layer.  
     
     
         4 . The method according to  claim 1 , wherein the member is obtained by forming the semiconductor element and/or semiconductor integrated circuit on a surface of a semiconductor substrate and implanting ions from the surface side to a predetermined depth to form the separation layer.  
     
     
         5 . The method according to  claim 2 , wherein the semiconductor substrate is a single-crystal silicon substrate or a compound semiconductor substrate.  
     
     
         6 . The method according to  claim 4 , wherein the semiconductor substrate is a single-crystal silicon substrate or a compound semiconductor substrate.  
     
     
         7 . The method according to  claim 1 , wherein the separation step is executed by applying the pressure of the fluid to the separation layer.  
     
     
         8 . The method according to  claim 1 , wherein after the separation step, the separation layer remaining on the semiconductor film side is removed, and then, the chip forming step is executed.  
     
     
         9 . The method according to  claim 1 , wherein after the separation step and the chip forming step, the step of removing the separation layer remaining on the semiconductor film side is executed.  
     
     
         10 . A method of manufacturing a thin-film semiconductor device, comprising: 
 the step of preparing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer;    the chip forming step of forming the member into chips in desired regions; and    the separation step of, after the chip forming step, separating the member at the separation layer.    
     
     
         11 . A thin-film semiconductor device obtaining by processing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer, the process comprising: 
 the separation step of separating the member at the separation layer by a pressure of a fluid; and    the chip forming step of, after the separation step, forming the semiconductor film into chips.    
     
     
         12 . A thin-film semiconductor device obtaining by processing a member having a semiconductor film with a semiconductor element and/or semiconductor integrated circuit on a separation layer, the process comprising: 
 the chip forming step of forming the member into chips in desired regions; and    the separation step of, after the chip forming step, separating the member at the separation layer.