Clustertool system software using plasma immersion ion implantation

Abstract

A cluster tool system having a computer memory. The memory has a variety of codes for operating a plasma immersion ion implantation chamber. In some embodiments, the cluster tool method also includes computer codes for a controlled cleaving process chamber, as well as others.

What is claimed is:  
     
         1 . A clustertool system for forming substrates, said clustertool including a memory comprising: 
 a code directed to providing a donor substrate;    a code directed to placing said donor substrate in a first chamber;    a code directed to introducing particles through a surface of said donor substrate to a selected depth underneath said surface, said particles being at a concentration at said selected depth to define a substrate material to be removed above said selected depth;    a code directed to placing said donor substrate in a second chamber and joining said donor substrate to a target substrate, said surface of said donor substrate facing a face of said target substrate to form a multi-layered substrate;    a code directed to placing said multi-layered substrate in a third chamber; and    a code directed to providing energy to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said substrate material to be removed from said substrate.    
     
     
         2 . The system of  claim 1  wherein said code directed to introducing turns on a step(s) of beam line ion implantation.  
     
     
         3 . The system of  claim 1  wherein said code directed to introducing turns on a step(s) of plasma immersion ion implantation.  
     
     
         4 . The system of  claim 1  wherein said particles are derived from hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds, and other light atomic mass particles.  
     
     
         5 . The system of  claim 1  wherein said particles are selected from the group consisting of neutral or charged molecules or atoms, or electrons.  
     
     
         6 . The system of  claim 1  wherein said particles are energetic.  
     
     
         7 . The system of  claim 6  wherein said energetic particles have sufficient kinetic energy to penetrate through said surface to said selected depth underneath said surface.  
     
     
         8 . The system of  claim 1  wherein said code directed to providing energy sustains said controlled cleaving action to remove said substrate material from said donor substrate to provide a film of material.  
     
     
         9 . The system of  claim 1  wherein said code directed to providing energy increases a controlled stress in said substrate material and sustains said controlled cleaving action to remove said substrate material from said donor substrate to provide a film of material.  
     
     
         10 . The system of  claim 1  further comprising a code directed to providing additional energy to said donor substrate to sustain said controlled cleaving action to remove said substrate material from said donor substrate to provide a film of material.  
     
     
         11 . The system of  claim 1  further comprising a code directed to providing additional energy to said donor substrate to increase a controlled stress in said substrate material and sustains said controlled cleaving action to remove said substrate material from said donor substrate to provide a film of material.  
     
     
         12 . The system of  claim 1  further comprising a code directed to increasing an energy level of said donor substrate while substantially preventing a possibility of cleaving said substrate material at said selected depth.  
     
     
         13 . The system of  claim 1  further comprising a code directed to increasing a stress of said substrate while substantially preventing a possibility of cleaving said donor substrate at said selected depth.  
     
     
         14 . The system of  claim 1  wherein said energy is provided by a thermal source or sink, a mechanical source, a chemical source, and an electrical source.  
     
     
         15 . The system of  claim 14  wherein said chemical source is selected from particles, fluids, gases, or liquids.  
     
     
         16 . The system of  claim 14  wherein said chemical source includes a chemical reaction.  
     
     
         17 . The system of  claim 16  wherein said chemical source is selected from flood, time-varying, spatially varying, or continuous.  
     
     
         18 . The system of  claim 14  wherein said mechanical source is derived from rotational, translational, compressional, expansional, or ultrasonic.  
     
     
         19 . The system of  claim 14  wherein said mechanical source is selected from flood, time-varying, spatially varying, or continuous.  
     
     
         20 . The system of  claim 14  wherein electrical source is selected from a group consisting of an applied voltage or an applied electro-magnetic field.  
     
     
         21 . The system of  claim 14  wherein said electrical source is selected from flood, time-varying, spatially varying, or continuous.  
     
     
         22 . The system of  claim 14  wherein said thermal source or sink is selected from radiation, convection, or conduction.  
     
     
         23 . The system of  claim 22  wherein said thermal source is selected from a photon beam, a fluid jet, a liquid jet, a gas jet, an electromagnetic field, a gas jet, an electron beam, a thermoelectric heating, and a furnace.  
     
     
         24 . The system of  claim 22  wherein said thermal sink is selected from a fluid jet, a liquid jet, a gas jet, a cryogenic fluid, a super-cooled liquid, a thermo-electric cooling means, and an electro/magnetic field.  
     
     
         25 . The system of  claim 22  wherein said thermal source is selected from flood, time-varying, spatially varying, or continuous.  
     
     
         26 . The system of  claim 1  further comprising a code directed to maintain said substrate at a temperature ranging between −200° C. and 450° C.