Semiconductor device

Abstract

A semiconductor device mainly comprises a chip disposed on the upper surface of a substrate. The upper surface of the substrate is provided with a ground ring, a power ring, and a plurality of conductive traces arranged at the periphery of the ground ring and the power ring. The semiconductor device comprises at least a surface-mountable device connected across the ground ring and the power ring. The semiconductor device of the present invention is characterized by having at least a bonding wire formed across the surface-mountable device. The bonding wire is connected between one of the bonding pads of the chip and the power ring wherein at least one downward depression is formed in a lengthen portion at a top of the bonding wire.

what is claimed is:  
     
         1 . A semiconductor device comprising: 
 a substrate having opposing upper and lower surfaces, the upper surface of the substrate being provided with a ground ring, a power ring, and a plurality of conductive traces arranged at the periphery of the ground ring and the power ring;    at least a surface-mountable device connected across the ground ring and the power ring;    a chip disposed on the upper surface of the substrate, the chip having a plurality of bonding pads located about the periphery thereof; and    at least a first bonding wire formed across the surface-mountable device, the first bonding wire having one end connected to one of the bonding pads of the chip and the other end connected to the power ring wherein at least one downward depression is formed in a lengthen portion at a top of the first bonding wire.    
     
     
         2 . The semiconductor device as claimed in  claim 1 , wherein the power ring has a protrusion portion extending away from the chip, and the protrusion portion is located corresponding to the surface-mountable device for bonding to the first bonding wire.  
     
     
         3 . The semiconductor device as claimed in  claim 1 , wherein the surface-mountable device is a capacitor.  
     
     
         4 . A semiconductor device comprising: 
 a substrate having opposing upper and lower surfaces, the upper surface of the substrate being provided with a ground ring, a power ring, and a plurality of conductive traces arranged at the periphery of the ground ring and the power ring;    at least a surface-mountable device connected across the ground ring and the power ring, the surface-mountable device comprising two end contacts and at least a bonding section formed on the surface-mountable device between the two end contacts;    a chip disposed on the upper surface of the substrate, the chip having a plurality of bonding pads located about the periphery thereof;    at least a first bonding wire having one end connected to one of the bonding pads of the chip and the other end connected to the bonding section on the surface-mountable device; and    at least a second bonding wire having one end connected to the bonding section on the surface-mountable device and the other end connected to the power ring.    
     
     
         5 . The semiconductor device as claimed in  claim 4 , wherein the power ring has a protrusion portion extending away from the chip, and the protrusion portion is located corresponding to the surface-mountable device for bonding to the first bonding wire.  
     
     
         6 . The semiconductor device as claimed in  claim 4 , wherein the surface-mountable device is a capacitor.