Application of an ozonated DI water spray to resist residue removal processes

Abstract

A method and apparatus for resist strip. Wafers ( 108 ) with a patterned resist formed thereon are placed in a carrier ( 104 ) in a process chamber ( 102 ). An ozonated deionized water mist ( 120 ) is sprayed on the surface of wafer ( 108 ). The ozonated deionized water mist ( 120 ) strips the resist and removes the resist residue without the use of hazardous chemicals. The ozonated deionized water mist ( 120 ) may be formed in an atomizer that mixes deionized water ( 116 ) with ozone ( 118 ). The ozonated deionized water mist ( 120 ) is then sprayed onto the wafers ( 108 ) while the wafers are being rotated.

In the claims:  
     
         1 . A method for fabricating an integrated circuit, comprising the steps of: 
 providing a semiconductor wafer with a resist pattern formed thereon;    placing said semiconductor wafer in a process chamber; and    spraying an ozonated deionized water mist to a surface of said semiconductor wafer to remove said resist pattern.    
     
     
         2 . The method of  claim 1 , wherein said spraying step is performed at an elevated temperature in the range of 55-65° C.  
     
     
         3 . The method of  claim 1 , wherein said ozonated deionized water mist is formed by combining deionized water with ozone in an atomizer.  
     
     
         4 . The method of  claim 1 , further comprising the step of rotating said semiconductor wafer during said spraying step.  
     
     
         5 . The method of  claim 4 , wherein said step of rotating said semiconductor wafer comprises alternately rotating said semiconductor wafer in a clockwise direction and a counterclockwise direction.  
     
     
         6 . The method of  claim 1  wherein said step of placing said semiconductor wafer is a process chamber comprises the step of placing said semiconductor wafer in a carrier with a plurality of additional semiconductor wafers.  
     
     
         7 . An apparatus for removing resist and resist residue from a wafer surface, comprising: 
 a process chamber;    a carrier for holding a plurality of wafers in said process chamber;    an atomizer for mixing deionized water and ozone gas to form an ozonated deionized water mist, said atomizer located within said process chamber.    
     
     
         8 . The apparatus of  claim 7 , further comprising a motor for rotating said carrier.  
     
     
         9 . The apparatus of  claim 8 , wherein said motor is capable of rotating said carrier in both a clockwise direction and a counterclockwise direction.