Abrasive-free metal CMP in passivation domain

Abstract

Metal CMP with reduced dishing and overpolish insensitivity is achieved with an abrasive-free polishing composition having a pH and oxidation-reduction potential in the domain of passivation of the metal and, therefore, a low static etching rate at high temperatures, e.g., higher than 50° C. Embodiments of the present invention comprise CMP of Cu film without any abrasive using a composition comprising one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, one or more agents to achieve a pH of about 3 to about 10 and deionized water.

What is claimed is:  
     
         1 . A method of removing at least a part of a copper-containing material from a substrate surface, the method comprising polishing the substrate using a composition having a pH and oxidation-reduction potential in the domain of passivation of the copper-containing material and comprising a chelating agent concentration between 0.2 wt. % and about 3 wt. % of the composition.  
     
     
         2 . The method according to  claim 1 , wherein the copper-containing material comprises copper (Cu) or a copper alloy.  
     
     
         3 . The method according to  claim 3 , wherein the composition comprises: 
 one or more chelating agents having one or more amine or amide groups, wherein the chelating agents are selected from the group of ethylenediaminetetraacetic acid, ethylenediamine, methylformamide, and combinations thereof;    one or more oxidizers;    one or more corrosion inhibitors; and    deionized water.    
     
     
         4 . The method according to  claim 3 , wherein the composition has a static etching rate of no greater than about 200Å per minute at about 52° C.  
     
     
         5 . The method according to  claim 3 , wherein the composition has a pH of about 3.0 to about 10.0.  
     
     
         6 . The method according to  claim 1 , wherein the composition further comprises up to 0.1 wt. % of abrasive particles.  
     
     
         7 . The method according to  claim 1 , wherein the method for removing at least a part of a copper-containing material comprises planarizing a deposited copper or copper alloy layer on a dielectric layer with an abrasive-free composition having a pH and oxidation-reduction potential in the domain of passivation of the deposited copper or copper alloy layer at a static etching rate of no greater than about 200Å per minute at about 52° C., wherein the composition comprises: 
 between 0.2 wt. % and about 3.0 wt. % of one or more chelating agents having one or more amine or amide groups, wherein the chelating agents are selected from the group of ethylenediaminetetraacetic acid, ethylenediamine, methylformamide, and combiantions thereof;  
 one or more oxidizers;  
 one or more corrosion inhibitors;  
 a pH of about 3.0 to about 10.0; and  
 deionized water.  
 
     
     
         8 . The method according to  claim 7 , wherein planarizing the deposited copper or the copper alloy layer on a dielectric layer comprises: 
 forming an interlayer dielectric having at least one opening therein over the substrate;    depositing a barrier layer and the copper or the copper alloy to fill the opening and form a layer on the interlayer dielectric; and    polishing the substrate with the abrasive-free composition to remove the copper or copper alloy layer from the interlayer dielectric to form a planarized surface.    
     
     
         9 . The method according to  claim 8 , wherein dishing is less than about 600Å and erosion is less than about 50 Å at about 58% overpolishing.  
     
     
         10 . The method according to  claim 1 , wherein the composition further removes materials selected from the group of aluminum, tungsten, titanium, titanium nitride, nickel, and combinations thereof.  
     
     
         11 . The method according to  claim 1 , wherein polishing is conducted at a pressure of about 1 to about 8 psi and a platen speed of about 20 to about 120 rpm for about 30 seconds to about 2,000 seconds.  
     
     
         12 . A method of removing at least a part of a copper-containing material from a substrate surface, the method comprising: 
 chemical-mechanical polishing (CMP) the substrate using an abrasive-free composition having a pH and oxidation-reduction potential in the domain of passivation of the copper-containing material, wherein the abrasive-free composition comprises:    between 0.2 wt. % and about 3.0 wt. % of one or more chelating agents;    one or more oxidizers;    one or more corrosion inhibitors; and    deionized water.    
     
     
         13 . The method according to  claim 12 , wherein the composition further comprises up to 0.1 wt. % of abrasive particles.  
     
     
         14 . The method according to  claim 12 , wherein the composition has a static etching rate of no greater than about 200 Å per minute at about 52° C.  
     
     
         15 . The method according to  claim 12 , wherein the composition has a pH of about 3.0 to about 10.0.  
     
     
         16 . The method according to  claim 12 , wherein the one or more chelating agents have one or more amine or amide groups and are selected from the group of ethylenediaminetetraacetic acid, ethylenediamine, methylformamide, and combinations thereof.  
     
     
         17 . A method of removing at least a part of a copper-containing material from a substrate surface, the method comprising: 
 forming an interlayer dielectric having at least one opening therein over the substrate;    depositing a barrier layer and a copper or a copper alloy on the barrier layer to fill the opening and form a layer on the interlayer dielectric; and    chemical-mechanical polishing (CMP) the copper or copper alloy layer from the interlayer dielectric to form a planarized surface using an abrasive-free composition having a pH and oxidation-reduction potential in the domain of passivation of the copper-containing material, wherein the composition comprises between 0.2 wt. % and about 3.0 wt. % of one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water.    
     
     
         18 . The method of  claim 17 , wherein the composition further comprises up to 0.1 wt. % abrasive particles.  
     
     
         19 . The method of  claim 3 , wherein the composition further comprises one or more agents to adjust the pH.  
     
     
         20 . The method of  claim 12 , wherein the composition further comprises one or more agents to adjust the pH.  
     
     
         21 . The method of  claim 17 , wherein the composition further comprises one or more agents to adjust the pH.  
     
     
         22 . The method of  claim 12 , wherein polishing is conducted at a pressure of about 1 to about 8 psi and a platen speed of about 20 to about 120 rpm for about 30 seconds to about 2,000 seconds.  
     
     
         23 . The method of  claim 17 , wherein the composition has a static etching rate of no greater than about 200Å per minute at about 52° C.  
     
     
         24 . The method of  claim 17 , wherein the composition has a pH of about 3.0 to about 10.0.  
     
     
         25 . The method of  claim 17 , wherein CMP is conducted at a pressure of about 1 to about 8 psi and a platen speed of about 20 to about 120 rpm for about 30 seconds to about 2,000 seconds.  
     
     
         26 . The method of  claim 17 , wherein the one or more chelating agents have one or more amine or amide groups and are selected from the group of ethylenediaminetetraacetic acid, ethylenediamine, methylformamide, and combinations thereof.  
     
     
         27 . The method of  claim 12 , wherein the composition further comprises up to 0.1 wt. % of abrasive particles.  
     
     
         28 . A composition for chemical mechanical polishing (CMP) a surface containing a metal, comprising: 
 between 0.2 wt. % and about 3.0 wt. % of one or more chelating agents;    a pH in the domain of passivation of the metal;    an oxidation-reduction potential in the domain of passivation of the metal; and    water.    
     
     
         29 . The method of  claim 28 , wherein the metal comprises copper (Cu) or a copper alloy.  
     
     
         30 . The method of  claim 28 , wherein the composition further comprises one or more pH adjusting agents, one or more oxidizers, one or more corrosion inhibitors, abrasive particles, and combinations thereof.  
     
     
         31 . The method of  claim 28 , wherein the composition further comprises up to about 0.1 wt. % abrasive particles.  
     
     
         32 . The method of  claim 28 , wherein the one or more chelating agents have one or more amine or amide groups.  
     
     
         33 . The method of  claim 32 , wherein the one or more chelating agents are selected from the group of ethylenediaminetetraacetic acid, ethylenediamine, methylformamide, and combinations thereof.  
     
     
         34 . The method of  claim 30 , wherein the one or more pH adjusting agents are an organic, inorganic acid, or combinations thereof.  
     
     
         35 . The method of  claim 34 , wherein the one or more pH adjusting agents are selected from the group of acetic acid, phosphoric acid, oxalic acid, and combinations thereof.  
     
     
         36 . The method of  claim 30 , wherein the one or more oxidizers are selected from the group of hydrogen peroxide, ferric nitrate, an iodate, and combinations thereof.  
     
     
         37 . The method of  claim 30 , wherein the one or more corrosion inhibitors are selected from the group of benzotriazole, mercaptobenzotriazole, 5-methyl-1-benzotriazole, and combinations thereof.  
     
     
         38 . The method of  claim 28 , wherein the composition has a static etching rate of no greater than about 200Å per minute at about 52° C.  
     
     
         39 . The method of  claim 28 , wherein the composition has a pH of about 3.0 to about 10.0.  
     
     
         40 . The method of  claim 30 , wherein the one or more oxidizers are present in a concentration between about 0.5 wt. % and about 8.0 wt. %.  
     
     
         41 . The method of  claim 30 , wherein the one or more corrosion inhibitors are present in a concentration between about 0.02 wt. % and about 1.0 wt. %.