US2002090889A1PendingUtilityA1
Apparatus and method of determining an endpoint during a chemical-mechanical polishing process
Priority: Jan 10, 2001Filed: Jan 10, 2001Published: Jul 11, 2002
Est. expiryJan 10, 2021(expired)· nominal 20-yr term from priority
B24B 49/02B24B 37/013
35
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Claims
Abstract
The present invention provides a polishing apparatus for use in polishing a substrate, including: (1) A polishing platen, and (2) a rotational strain sensor coupled to the polishing platen configured to detect a change in a rotational strain of the polishing platen during a polishing process. In addition, the present invention provides an accompanying method of detecting an endpoint during the polishing process by detecting a change between a first rotational strain and a second rotational strain with the rotational strain sensor.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A polishing apparatus, comprising:
a polishing platen; and a rotational strain sensor coupled to the polishing platen and configured to detect a change in a rotational strain of the polishing platen during a polishing process.
2 . The polishing apparatus as recited in claim 1 wherein the polishing apparatus further includes a polishing pad coupled to an outer surface of the polishing platen and the rotational strain sensor is a piezoelectric sensor located between the outer surface and the polishing pad.
3 . The polishing apparatus as recited in claim 1 wherein the polishing platen includes a base plate having a backing block projecting therefrom and an upper plate having a cavity formed therein and configured to receive the backing block therein, the rotational strain sensor being located between a face of the backing block and a face of the cavity.
4 . The polishing apparatus as recited in claim 1 wherein the polishing platen includes a backing block projecting from a surface thereof and the polishing apparatus further includes a polishing pad having a cavity formed therein and configured to receive the backing block therein, the rotational strain sensor being located between a face of the backing block and a face of the cavity.
5 . The polishing apparatus as recited in claim 1 wherein the polishing platen includes a base plate and the rotational strain sensor extends from the base plate and the polishing platen further includes an upper plate having a cavity formed therein and configured to receive the rotational strain sensor therein.
6 . The polishing apparatus as recited in claim 5 wherein the rotational strain sensor includes a flexible stud member having adjacent, spaced-apart conductors located within the flexible stud member.
7 . The polishing apparatus as recited in claim 5 wherein the rotational strain sensor includes a rigid stud member supported on a flexible base having adjacent, spaced-apart conductors.
8 . The polishing apparatus as recited in claim 1 wherein the rotational strain sensor extends from a surface of the polishing platen and the polishing platen further includes a polishing pad having a cavity formed therein and configured to receive the rotational strain sensor therein.
9 . The polishing apparatus as recited in claim 8 wherein the rotational strain sensor includes a flexible stud member having adjacent, spaced-apart conductors located within the flexible stud member.
10 . The polishing apparatus as recited in claim 8 wherein the rotational strain sensor includes a rigid stud member supported on a flexible base having adjacent, spaced-apart conductors.
11 . The polishing apparatus as recited in claim 1 further including a motor driven shaft coupled to the polishing platen, the rotational strain sensor coupled to the motor driven shaft.
12 . A method of detecting an endpoint during polishing of a substrate, comprising:
pressing a substrate having a first layer composed of a first material and a second layer composed of a second material against a polishing pad coupled to a polishing platen; producing a first rotational strain of the polishing platen by polishing the first layer of the substrate with the polishing pad; producing a second rotational strain of the polishing platen by polishing the second layer of the substrate with the polishing pad; and detecting a change between the first rotational strain and the second rotational strain with a rotational strain sensor coupled to the polishing platen.
13 . The method as recited in claim 12 wherein detecting the change includes detecting a change with a piezoelectric sensor located between the polishing platen and the polishing pad.
14 . The method as recited in claim 12 wherein detecting the change includes detecting a change with a rotational strain sensor located between a face of a backing block projecting from a base plate of the polishing platen and a face of a cavity formed in an upper plate of the polishing platen.
15 . The method as recited in claim 12 wherein detecting the change includes detecting a change with a rotational strain sensor located between a face of a backing block projecting from the polishing platen and a face of a cavity formed in the polishing pad.
16 . The method as recited in claim 12 wherein detecting the change includes detecting a change with a rotational strain sensor that extends from a base plate of the polishing platen and is received in a cavity formed in an upper plate of the polishing platen.
17 . The method as recited in claim 16 wherein detecting the change includes detecting a change with a rotational strain sensor that includes a flexible stud member having adjacent, spaced-apart conductors located within the flexible stud member.
18 . The method as recited in claim 16 wherein detecting the change includes detecting a change with a rotational strain sensor that includes a rigid stud member supported on a flexible base having adjacent, spaced-apart conductors.
19 . The method as recited in claim 12 wherein detecting the change includes detecting a change with a rotational strain sensor that extends from the polishing platen and is received in a cavity formed in the polishing pad.
20 . The method as recited in claim 19 wherein detecting the change includes detecting a change with a rotational strain sensor that includes a flexible stud member having adjacent, spaced-apart conductors located within the flexible stud member.
21 . The method as recited in claim 19 wherein detecting the change includes detecting a change with a rotational strain sensor that includes a rigid stud member supported on a flexible base having adjacent, spaced-apart conductors.
22 . The method as recited in claim 12 wherein detecting the change includes detecting a change with a rotational strain sensor coupled to a motor driven shaft that is coupled to the polishing platen.
23 . The method as recited in claim 12 wherein pressing a substrate includes pressing a substrate located over a semiconductor wafer.
24 . The method as recited in claim 23 wherein pressing a substrate includes pressing a first layer comprising a dielectric and pressing a second layer comprising a metal.
25 . The method as recited in claim 24 further including forming transistors on the semiconductor wafer, forming a plurality of alternating first and second layers over the transistors and interconnecting the transistors to form an operative integrated circuit.
26 . A method of polishing a substrate comprising:
detecting a change in a rotational strain during a polishing process of the substrate.
27 . The method as recited in claim 26 further comprising:
changing the polishing process when a change in the rotational strain is detected.
28 . The method as recited in claim 26 further comprising:
providing a strain gauge to measure the rotational strain.Join the waitlist — get patent alerts
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