Polishing composition

Abstract

A polishing composition comprising an improver of a ratio of a polishing rate of an insulating film to that of a stopper film, wherein the polishing rate of the stopper film is selectively decreased, comprising one or more compounds selected from the group consisting of a monoamine or diamine compound; a polyamine having three or more amino groups in its molecule; an ether group-containing amine; and a heterocyclic compound having nitrogen atom. The polishing composition can be used for removing an insulating film which has been embedded for isolation into a trench formed on a silicon substrate and sedimented outside the trench, thereby planing a surface of the silicon substrate.

What is claimed is:  
     
         1 . An improver of a ratio of a polishing rate of an insulating film to that of a stopper film, wherein the polishing rate of the stopper film is selectively decreased, comprising one or more compounds selected from the group consisting of: 
 (A) a monoamine compound represented by Formula (I):                           wherein each of R 1 , R 2  and R 3  is independently hydrogen atom, an alkyl group having 1 to 6 carbon atoms or an alkenyl group having 2 to 6 carbon atoms, with proviso that a total number of carbon atoms in R 1 , R 2  and R 3  is from 1 to 8;    (B) a diamine compound represented by Formula (II):                           wherein each of R 4 , R 5 , R 7  and R 8  is independently hydrogen atom, an alkyl group having 1 to 6 carbon atoms or an alkanol group having 1 to 6 carbon atoms; and R 6  is a linear, branched or cyclic alkylene group having 1 to 18 carbon atoms, or a group represented by Formula (III):                           wherein each of R 9  and R 10  is independently hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and each of a and b is an integer of from 0 to 9, with proviso that a total number of carbon atoms in Formula (III) is from 2 to 18;    (C) a monoamine compound represented by Formula (IV):                           wherein each of R 11 , R 12  and R 13  is independently hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an alkanol group having 1 to 8 carbon atoms, an alkanediol group having 1 to 8 carbon atoms, an alkanetriol group having 1 to 8 carbon atoms or a group represented by —(R 14 O) c R 15 ; R 14  is an alkylene group having 1 to 4 carbon atoms; R 15  is hydrogen atom, an alkyl group having 1 to 18 carbon atoms or an acyl group having 1 to 18 carbon atoms; and c is an integer of from 1 to 20, with proviso that: 
 (i) at least one of R 11 , R 12  and R 13  is an alkanediol group having 1 to 8 carbon atoms, an alkanetriol group having 1 to 8 carbon atoms or a group represented by —(R 14 O) c R 35 , wherein R 35  is an alkyl group having 1 to 18 carbon atoms or an acyl group having 1 to 18 carbon atoms; or  
 (ii) in a case where at least one of R 11 , R 12  and R 13  is an alkanol group having 1 to 8 carbon atoms or a group represented by —(R 14 O) c H, at least one of the other groups is an alkyl group having 1 to 8 carbon atoms;  
   (D) a polyamine having three or more amino groups in its molecule;    (E) an ether group-containing amine; and    (F) a heterocyclic compound having nitrogen atom.    
     
     
         2 . A polishing composition comprising the improver of  claim 1 .  
     
     
         3 . The polishing composition according to  claim 2 , further comprising an abrasive, a pH adjusting agent, or a mixture thereof.  
     
     
         4 . The polishing composition according to  claim 2  or  3 , which is used for removing an insulating film which has been embedded for isolation into a trench formed on a silicon substrate and sedimented outside the trench, thereby planing a surface of the silicon substrate.  
     
     
         5 . A process for selectively increasing a ratio of a polishing rate of an insulating film to that of a stopper film, comprising applying the improver of  claim 1 .  
     
     
         6 . A process for producing a substrate to be polished, comprising applying the polishing composition of  claim 2 .  
     
     
         7 . A process for producing a substrate to be polished, comprising applying the polishing composition of  claim 3 .  
     
     
         8 . A process for producing a substrate to be polished, comprising applying the polishing composition of  claim 4 .  
     
     
         9 . A polishing process comprising removing an insulating film which has been embedded for isolation into a trench formed on a silicon substrate and sedimented outside the trench with the polishing composition of  claim 2 , thereby planing a surface of the silicon substrate.