Generic layer transfer methodology by controlled cleavage process

Abstract

A technique for forming a film of material ( 12 ) from a donor substrate ( 10 ). The technique has a step of forming a weakened region in a selected manner at a selected depth ( 20 ) underneath the surface. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate ( 10 ) at the selected depth ( 20 ), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

What is claimed is:  
     
         1 . A process for forming a film of material from a substrate, said process comprising steps of: 
 forming a weakened region in a selected manner at a selected depth underneath said surface, to define a substrate material to be removed above said selected depth; and    providing energy to a selected region of said substrate to initiate a controlled cleaving action at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.    
     
     
         2 . The process of  claim 1  wherein said step of providing energy sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.  
     
     
         3 . The process of  claim 1  wherein said step of providing energy increases a controlled stress in said material and sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.  
     
     
         4 . The process of  claim 1  further comprising a step of providing additional energy to said substrate to sustain said controlled cleaving action to remove said material from said substrate to provide a film of material.  
     
     
         5 . The process of  claim 1  further comprising a step of providing additional energy to said substrate to increases a controlled stress in said material and sustains said controlled cleaving action to remove said material from said substrate to provide a film of material.  
     
     
         6 . The process of  claim 1  wherein said forming step creates damage selected from the group consisting of atomic bond damage, bond substitution, weakening, and breaking bonds of said substrate at said selected depth.  
     
     
         7 . The process of  claim 6  wherein said damage causes stress to said substrate material.  
     
     
         8 . The process of  claim 6  wherein said damage reduces an ability of said substrate material to withstand stress without a possibility of a cleaving of said substrate material.  
     
     
         9 . The process of  claim 1  wherein said propagating cleave front is selected from a single cleave front or multiple cleave fronts.  
     
     
         10 . The process of  claim 1  wherein said forming step causes stress of said material region at said selected depth by a presence of particles at said selected depth.